IXTP12N50P IXYS

IXTP12N50P electronic component of IXYS
IXTP12N50P IXYS
IXTP12N50P MOSFETs
IXTP12N50P  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IXTP12N50P MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXTP12N50P MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IXTP12N50P
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET 12 Amps 500V 0.5 Ohm Rds
Datasheet: IXTP12N50P Datasheet (PDF)
Price (USD)
5: USD 16.44 ea
Line Total: USD 82.2 
Availability - 31
  
Ship by Wed. 30 Jul to Tue. 05 Aug
QtyUnit Price
5$ 16.44
10$ 9.2125
100$ 2.325
500$ 2.0375
1000$ 1.6875
2500$ 1.575
5000$ 1.5125
10000$ 1.4625

Availability 31
Ship by Wed. 30 Jul to Tue. 05 Aug
MOQ : 5
Multiples : 1
QtyUnit Price
5$ 16.44
10$ 9.2125
100$ 2.325
500$ 2.0375
1000$ 1.6875
2500$ 1.575
5000$ 1.5125
10000$ 1.4625


Availability 289
Ship by Mon. 28 Jul to Wed. 30 Jul
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 4.382
3$ 3.948
7$ 3.15
17$ 2.968
250$ 2.926


Availability 289
Ship by Wed. 30 Jul to Tue. 05 Aug
MOQ : 74
Multiples : 1
QtyUnit Price
74$ 3.5329
82$ 3.1964
250$ 3.0147

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Height
Length
Series
Transistor Type
Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IXTP12N50P from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXTP12N50P and other electronic components in the MOSFETs category and beyond.

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TM Polar V = 500V IXTA12N50P DSS Power MOSFET I = 12A IXTP12N50P D25 R 500m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 AA (IXTA) Fast Intrinsic Rectifier G S Symbol Test Conditions Maximum Ratings D (Tab) V T = 25C to 150C 500 V DSS J V T = 25C to 150C, R = 1M 500 V DGR J GS TO-220AB (IXTP) V Continuous 30 V GSS V Transient 40 V GSM I T = 25C12 A D25 C I T = 25C, Pulse Width Limited by T 30 A G DM C JM D D (Tab) S I T = 25C12 A A C E T = 25C 600 mJ AS C G = Gate D = Drain dv/dt I I , V V , T 150C 10 V/ns S = Source Tab = Drain S DM DD DSS J P T = 25C 200 W D C T -55 ... +150 C J Features T 150 C JM z T -55 ... +150 C International Standard Packages stg z Dynamic dv/dt Rating T 1.6mm (0.062in.) from Case for 10s 300 C L z Avalanche Rated T Plastic Body for 10 Seconds 260 C sold z Fast Intrinsic Rectifier M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in. d z Low Q G z Weight TO-263 2.5 g Low R DS(on) TO-220 3.0 g z Low Drain-to-Tab Capacitance z Low Package Inductance Advantages Symbol Test Conditions Characteristic Values z Easy to Mount (T = 25C Unless Otherwise Specified) Min. Typ. Max. J z Space Savings BV V = 0V, I = 250A 500 V DSS GS D Applications V V = V , I = 250A 3.0 5.5 V GS(th) DS GS D z I V = 30V, V = 0V 100 nA DC-DC Converters GSS GS DS z Battery Chargers I V = V , V = 0V 5 A DSS DS DSS GS z Switch-Mode and Resonant-Mode T = 125C 250 A J Power Supplies z R V = 10V, I = 0.5 I , Notes 1, 2 500 m Uninterrupted Power Supplies DS(on) GS D D25 z AC Motor Drives z High Speed Power Switching Applications 2010 IXYS CORPORATION, All Rights Reserved DS99322G(04/10)IXTA12N50P IXTP12N50P Symbol Test Conditions Characteristic Values TO-263 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 7.5 13 S fs DS D D25 C 1830 pF iss C V = 0V, V = 25V, f = 1MHz 182 pF oss GS DS C 16 pF rss t 22 ns d(on) Resistive Switching Time t 27 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 65 ns R = 10 (External) d(off) G t 20 ns f Q 29 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 11 nC gs GS DS DSS D D25 Q 10 nC gd R 0.62 C/W thJC R TO-220 0.50 C/W thCH Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 12 A S GS I Repetitive, Pulse Width Limited by T 48 A SM JM TO-220 Outline V I = I , V = 0V, Note 1 1.5 V F S GS SD t 300 ns rr I = 6A, -di/dt = 150A/s, F Q 2.8 C RM V = 100V, V = 0V R GS I 18.2 A RM Notes: 1. Pulse test, t 300s, duty cycle, d 2%. 2. On through-hole packages, R Kelvin test contact DS(on) location must be 5mm or less from the package body. Pins: 1 - Gate 2 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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