TM TrenchP V = - 200V IXTA32P20T DSS I = - 32A Power MOSFETs IXTP32P20T D25 R 130m DS(on) IXTQ32P20T P-Channel Enhancement Mode Avalanche Rated IXTH32P20T TO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ) G G S D G D (Tab) S D D (Tab) S D (Tab) Symbol Test Conditions Maximum Ratings TO-247 (IXTH) V T = 25C to 150C - 200 V DSS J V T = 25C to 150C, R = 1M - 200 V DGR J GS V Continuous + 15 V GSS V Transient + 25 V GSM G D I T = 25C - 32 A D (Tab) S D25 C I T = 25C, Pulse Width Limited by T - 96 A DM C JM G = Gate D = Drain I T = 25C - 32 A A C S = Source Tab = Drain E T = 25C1J AS C P T = 25C 300 W D C T -55 ... +150 C J T 150 C JM Features T -55 ... +150 C stg z T 1.6mm (0.062 in.) from Case for 10s 300 C International Standard Packages L z T Plastic body for 10s 260 C Avalanche Rated SOLD z Extended FBSOA F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb. C z Fast Intrinsic Diode M Mounting Torque (TO-220, TO-247 & TO-3P) 1.13 / 10 Nm/lb.in. d z Low R and Q DS(ON) G Weight TO-263 2.5 g TO-220 3.0 g Advantages TO-3P 5.5 g TO-247 6.0 g z Easy to Mount z Space Savings z High Power Density Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = - 250A - 200 V DSS GS D z High-Side Switching V V = V , I = - 250A - 2.0 - 4.0 V z GS(th) DS GS D Push Pull Amplifiers z I V = 15V, V = 0V 100 nA DC Choppers GSS GS DS z Automatic Test Equipment I V = V , V = 0V - 25 A DSS DS DSS GS z Current Regulators T = 125C -1.25 mA J z Battery Charger Applications R V = -10V, I = 0.5 I , Note 1 130 m DS(on) GS D D25 2013 IXYS CORPORATION, All Rights Reserved DS100288B(01/13) IXTA32P20T IXTQ32P20T IXTP32P20T IXTH32P20T Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = 0.5 I , Note 1 18 30 S fs DS D D25 C 14.5 nF iss C V = 0V, V = - 25V, f = 1MHz 565 pF oss GS DS C 105 pF rss t 32 ns d(on) Resistive Switching Times t 15 ns r = -10V, V = 0.5 V , I = 0.5 I V GS DS DSS D D25 t 57 ns d(off) R = 1 (External) G t 12 ns f Q 185 nC g(on) Q V = -10V, V = 0.5 V , I = 0.5 I 66 nC gs GS DS DSS D D25 Q 45 nC gd R 0.42 C/W thJC R TO-220 0.50 C/W thCS TO-247 &TO-3P 0.21 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V - 32 A S GS I Repetitive, Pulse Width Limited by T -128 A SM JM V I = - 32A, V = 0V, Note 1 -1.3 V SD F GS t 190 ns rr I = -16A, -di/dt = -100A/s F Q 1.7 C RM V = -100V, V = 0V R GS I -17.8 A RM Note 1: Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537