IXTP460P2 IXYS

IXTP460P2 electronic component of IXYS
IXTP460P2 IXYS
IXTP460P2 MOSFETs
IXTP460P2  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IXTP460P2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXTP460P2 MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IXTP460P2
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET PolarP2 Power MOSFET
Datasheet: IXTP460P2 Datasheet (PDF)
Price (USD)
1: USD 6.275 ea
Line Total: USD 6.28 
Availability - 251
  
Ship by Tue. 29 Jul to Thu. 31 Jul
QtyUnit Price
1$ 6.275
10$ 4.268
100$ 3.608
500$ 3.245
1000$ 2.86
25000$ 2.86

Availability 251
Ship by Tue. 29 Jul to Thu. 31 Jul
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 6.275
10$ 4.268
100$ 3.608
500$ 3.245
1000$ 2.86
25000$ 2.86

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Height
Length
Series
Type
Width
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IXTP460P2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXTP460P2 and other electronic components in the MOSFETs category and beyond.

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TM PolarP2 V = 500V IXTA460P2 DSS I = 24A Power MOSFET IXTP460P2 D25 R 270m DS(on) IXTQ460P2 N-Channel Enhancement Mode t = 400ns rr(typ) Avalanche Rated IXTH460P2 Fast Intrinsic Diode TO-220AB (IXTP) TO-263 AA (IXTA) TO-3P (IXTQ) G G S D G D S D (Tab) D (Tab) S D (Tab) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 500 V DSS J TO-247 (IXTH) V T = 25C to 150C, R = 1M 500 V DGR J GS V Continuous 30 V GSS V Transient 40 V GSM I T = 25C24A D25 C I T = 25C, Pulse Width Limited by T 50 A G DM C JM D D (Tab) S I T = 25C12A A C E T = 25C 750 mJ AS C G = Gate D = Drain dv/dt I I , V V ,T 150C 15 V/ns S DM DD DSS J S = Source Tab = Drain P T = 25C 480 W D C T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg Features T Maximum Lead Temperature for Soldering 300 C L z Avalanche Rated T Plastic Body for 10s 260 C SOLD z Fast Intrinsic Diode F Mounting Force TO-263 10..65 / 2.2..14.6 Nm/lb.in. z C Dynamic dv/dt Rated M Mounting Torque (TO-220, TO-3P & TO-247) 1.13 / 10 Nm/lb.in. z d Low Package Inductance Weight TO-263 2.5 g TO-220 3.0 g TO-3P 5.5 g Advantages TO-247 6.0 g z High Power Density z Easy to Mount z Space Savings Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 250A 500 V Applications DSS GS D V V = V , I = 250A 2.5 4.5 V z GS(th) DS GS D Switch-Mode and Resonant-Mode Power Supplies I V = 30V, V = 0V 100 nA GSS GS DS z DC-DC Converters I V = V , V = 0V 25 A z DSS DS DSS GS Laser Drivers T = 125C 250 A z J AC and DC Motor Drives z R V = 10V, I = 0.5 I , Note 1 270 m Robotics and Servo Controls DS(on) GS D D25 2010 IXYS CORPORATION, All Rights Reserved DS100216B(06/10)IXTA460P2 IXTP460P2 IXTQ460P2 IXTH460P2 Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 14 24 S fs DS D D25 C 2890 pF iss C V = 0V, V = 25V, f = 1MHz 280 pF oss GS DS C 22 pF rss t 15 ns d(on) Resistive Switching Times t 9 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 30 ns d(off) R = 10 (External) G t 5 ns f Q 48 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 13 nC gs GS DS DSS D D25 Q 16 nC gd R 0.26 C/W thJC R TO-220 0.50 C/W thCS R TO-3P & TO-247 0.25 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 24 A S GS I Repetitive, Pulse Width Limited by T 96 A SM JM V I = I , V = 0V, Note 1 1.3 V SD F S GS t 400 ns rr I = 12A, -di/dt = 100A/s F I 19.6 A RM V = 100V, V = 0V R GS Q 3.9 C RM Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
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IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS
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