Depletion Mode V = 1000V IXTA6N100D2 DSX MOSFET I > 6A IXTP6N100D2 D(on) R 2.2 IXTH6N100D2 DS(on) N-Channel D TO-263 AA (IXTA) G G S D (Tab) S TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 1000 V DSX J G D D (Tab) V Continuous 20 V S GSX V Transient 30 V GSM TO-247 (IXTH) P T = 25 C 300 W D C T - 55 ... +150 C J T 150 C JM T - 55 ... +150 C stg G T Maximum Lead Temperature for Soldering 300 C L D T 1.6 mm (0.062in.) from Case for 10s 260 C S D (Tab) SOLD M Mounting Torque (TO-220 & TO-247) 1.13 / 10 Nm/lb.in. d G = Gate D = Drain Weight TO-263 2.5 g S = Source Tab = Drain TO-220 3.0 g TO-247 6.0 g Features Normally ON Mode International Standard Packages Molding Epoxies Meet UL 94 V-0 Symbol Test Conditions Characteristic Values Flammability Classification (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV V = - 5V, I = 250A 1000 V Advantages DSX GS D V V = 25V, I = 250 A - 2.5 - 4.5 V GS(off) DS D Easy to Mount Space Savings I V = 20V, V = 0V 100 nA GSX GS DS High Power Density I V = V , V = - 5V 5 A DSX(off) DS DSX GS T = 125C 50A Applications J R V = 0V, I = 3A, Note 1 2.2 DS(on) GS D Audio Amplifiers Start-Up Circuits I V = 0V, V = 50V, Note 1 6 A D(on) GS DS Protection Circuits Ramp Generators Current Regulators Active Loads 2017 IXYS CORPORATION, All Rights Reserved DS100183C(4/17)IXTA6N100D2 IXTP6N100D2 IXTH6N100D2 Symbol Test Conditions Characteristic Values TO-220 (IXTP) Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 30V, I = 3A, Note 1 2.6 4.2 S fs DS D C 2650 pF iss C V = -10V, V = 25V, f = 1MHz 167 pF oss GS DS C 41 pF rss t 25 ns d(on) Resistive Switching Times t 80 ns r V = 5V, V = 500V, I = 3A GS DS D t 34 ns d(off) R = 2.4 (External) G t 47 ns f Q 95 nC Pins: 1 - Gate 2 - Drain g(on) 3 - Source 4 - Drain Q V = 5V, V = 500V, I = 3A 11 nC gs GS DS D Q 51 nC gd R 0.41 C/W thJC R TO-220 0.50 C/W thCS TO-247 0.21 C/W Safe-Operating-Area Specification Characteristic Values Symbol Test Conditions Min. Typ. Max. SOA V = 800V, I = 225mA, T = 75 C, Tp = 5s 180 W DS D C TO-247 (IXTH) AD Outline Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J V I = 6A, V = -10V, Note 1 0.8 1.3 V SD F GS t 952 ns rr I = 3A, -di/dt = 100A/ s F I 16 A RM V = 100V, V = -10V R GS Q 7.6 C RM Note 1. Pulse test, t 300s, duty cycle, d 2%. TO-263 (IXTA) Outline Dim. Millimeter Inches Min. Max. Min. Max. 1 = Gate 2 = Drain A 4.06 4.83 .160 .190 b 0.51 0.99 .020 .039 3 = Source b2 1.14 1.40 .045 .055 c 0.40 0.74 .016 .029 c2 1.14 1.40 .045 .055 D 8.64 9.65 .340 .380 D1 8.00 8.89 .280 .320 E 9.65 10.41 .380 .405 E1 6.22 8.13 .270 .320 1. Gate e 2.54 BSC .100 BSC 2. Drain 3. Source L 14.61 15.88 .575 .625 4. Drain L1 2.29 2.79 .090 .110 L2 1.02 1.40 .040 .055 L3 1.27 1.78 .050 .070 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537