TM IXTA 75N10P V = 100 V PolarHT DSS IXTP 75N10P I =75A Power MOSFET D25 IXTQ 75N10P R 25 m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G S V T = 25 C to 175 C 100 V DSS J (TAB) V T = 25 C to 175 C R = 1 M 100 V DGR J GS V Continuous 20 V GS TO-220 (IXTP) V Transient 30 V GSM I T = 25C75A D25 C I T = 25 C, pulse width limited by T 200 A DM C JM I T = 25C50A AR C G (TAB) D S E T = 25C30mJ AR C E T = 25 C 1.0 J AS C TO-3P (IXTQ) dv/dt I I , di/dt 100 A/s, V V , 10 V/ns S DM DD DSS T 150C, R = 10 J G P T = 25 C 360 W D C T -55 ... +175 C J G T 175 C D JM (TAB) S T -55 ... +175 C stg T 1.6 mm (0.062 in.) from case for 10 s 300 C L G = Gate D = Drain T Plastic body for 10 s 260 C SOLD S = Source TAB = Drain M Mounting torque (TO-3P / TO-220) 1.13/10 Nm/lb.in. d Weight TO-3P 5.5 g Features TO-220 4 g TO-263 3 g l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance Symbol Test Conditions Characteristic Values - easy to drive and to protect (T = 25 C, unless otherwise specified) Min. Typ. Max. J BV V = 0 V, I = 250 A 100 V DSS GS D Advantages V V = V , I = 250A 3.0 5.5 V GS(th) DS GS D l Easy to mount l I V = 20 V , V = 0 100 nA Space savings GSS GS DC DS l High power density I V = V 25 A DSS DS DSS V = 0 V T = 125 C 250 A GS J R V = 10 V, I = 0.5 I 21 25 m DS(on) GS D D25 Pulse test, t 300 s, duty cycle d 2 % DS99158E(12/05) 2006 IXYS All rights reserved IXTA 75N10P IXTP 75N10P IXTQ 75N10P Symbol Test Conditions Characteristic Values TO-3P (IXTQ) Outline (T = 25 C, unless otherwise specified) J Min. Typ. Max. g V = 10 V I = 0.5 I , pulse test 20 28 S fs DS D D25 C 2250 pF iss C V = 0 V, V = 25 V, f = 1 MHz 890 pF oss GS DS C 275 pF rss t 27 ns d(on) t V = 10 V, V = 0.5 V , I = 0.5 I 53 ns r GS DS DSS D D25 t R = 10 (External) 66 ns d(off) G t 45 ns f Q 74 nC g(on) Q V = 10 V, V = 0.5 V , I = 0.5 I 18 nC gs GS DS DSS D D25 Q 40 nC gd R 0.42C/W thJC R (TO-3P) 0.21 C/W thCK (TO-220) 0.25 C/W Source-Drain Diode Characteristic Values (T = 25 C, unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. I V = 0 V 75 A S GS I Repetitive 200 A SM TO-220 (IXTP) Outline V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = 25 A 120 ns rr F -di/dt = 100 A/s Q V = 50 V 2.0 C RM R TO-263 (IXTA) Outline Pins: 1 - Gate 2 - Drain 3 - Source 4 - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2