Trench Gate V = 200V IXTA86N20T DSS Power MOSFET I = 86A IXTP86N20T D25 R 33m DS(on) IXTQ86N20T N-Channel Enhancement Mode TO-263 Avalance Rated G S D (Tab) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings V T = 25 C to 175 C 200 V DSS J G V T = 25 C to 175 C, R = 1M 200 V D DGR J GS S D (Tab) V Continuous 20 V GSS V Transient 30 V GSM TO-3P I T = 25 C86A D25 C I T = 25 C, Pulse Width Limited by T 260 A G DM C JM D I T = 25 C10A S A C D (Tab) E T = 25 C1J AS C P T = 25 C 550 W D C G = Gate D = Drain dv/dt I I , V V , T 150C 3 V/ns S DM DD DSS J S = Source Tab = Drain T -55 ... +175 C J T 175 C JM Features T -55 ... +175 C stg High Current Handling Capability T Maximum Lead Temperature for Soldering 300 C L Avalanche Rated T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Fast Intrinsic rectifier F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb Low R C DS(on) M Mounting Torque (TO-220 & TO-3P) 1.13 / 10 Nm/lb.in d Weight TO-263 2.5 g Advantages TO-220 3.0 g TO-3P 5.5 g Easy to Mount Space Savings High Power Density Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 250A 200 V DSS GS D DC-DC Converters V V = V , I = 1mA 3.0 5.0 V Battery Chargers GS(th) DS GS D Switch-Mode and Resonant-Mode I V = 20V, V = 0V 200 nA GSS GS DS Power Supplies DC Choppers I V = V , V = 0V 1 A DSS DS DSS GS AC Motor Drives T = 125C 250 A J Uninterruptible Power Supplies High Speed Power Switching R V = 10V, I = 0.5 I , Note 1 33 m DS(on) GS D D25 Applications 2018 IXYS CORPORATION, All Rights Reserved DS99664A(4/18)IXTA86N20T IXTP86N20T IXTQ86N20T Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 0.5 I , Note 1 46 78 S fs DS D D25 C 4500 pF iss C V = 0V, V = 25V, f = 1MHz 550 pF oss GS DS C 73 pF rss t 22 ns d(on) Resistive Switching Times t 24 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 52 ns d(off) R = 3.3 (External) G t 29 ns f Q 90 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 30 nC gs GS DS DSS D D25 Q 23 nC gd R 0.27 C/W thJC R TO-220 0.50 C/W thCS TO-3P 0.25 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 86 A S GS I Repetitive, pulse Width Limited by T 260 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS I = 25A, -di/dt = 100A/ s,V = 100V t 140 ns F R rr Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537