IXTP86N20X4 V = 200V X4-Class DSS TM I = 86A D25 Power MOSFET R 13m DS(on) D N-Channel Enhancement Mode Avalanche Rated G TO-220 (IXTP) S G D S D (Tab) Symbol Test Conditions Maximum Ratings V T = 25 C to 175 C 200 V DSS J V T = 25 C to 175 C, R = 1M 200 V G = Gate D = Drain DGR J GS S = Source Tab = Drain V Continuous 20 V GS V Transient 30 V GSM I T = 25 C 86 A D25 C I T = 25 C, Pulse Width Limited by T 160 A DM C JM Features I T = 25 C 43 A A C E T = 25 C 500 mJ AS C International Standard Package dv/dt I I , V V , T 150 C 50 V/ns Low R and Q S DM DD DSS J DS(ON) G Avalanche Rated P T = 25 C 300 W D C Low Package Inductance T -55 ... +175 C J T 175 C JM T -55 ... +175 C Advantages stg T Maximum Lead Temperature for Soldering 300 C L High Power Density 1.6 mm (0.062 in.) from Case for 10s Easy to Mount Space Savings M Mounting Torque 1.13 / 10 Nm/lb.in d Weight 3 g Applications Switch-Mode and Resonant-Mode Power Supplies Symbol Test Conditions Characteristic Values DC-DC Converters (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J PFC Circuits AC and DC Motor Drives BV V = 0V, I = 250A 200 V DSS GS D Robotics and Servo Controls V V = V , I = 250A 2.5 4.5 V GS(th) DS GS D I V = 20V, V = 0V 100 nA GSS GS DS I V = V , V = 0V 5 A DSS DS DSS GS T = 150 C 300 A J R V = 10V, I = 0.5 I , Note 1 11 13 m DS(on) GS D D25 DS101006B(12/20) 2020 Littelfuse, Inc.IXTP86N20X4 Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 50 82 S fs DS D D25 R Gate Input Resistance 4.75 Gi C 2250 pF iss C V = 0V, V = 25V, f = 1MHz 660 pF oss GS DS C 185 pF rss t 27 ns d(on) Resistive Switching Times t 38 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 76 ns d(off) R = 10 (External) G t 35 ns f Q 70 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 20 nC gs GS DS DSS D D25 Q 38 nC gd R 0.50 C/W thJC R 0.50 C/W thJC Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 86 A S GS I Repetitive, Pulse Width Limited by T 344 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 110 ns rr I = 43A, -di/dt = 100A/s, F I 0.5 A RM V = 100V R Q 9.4 C RM Note 1: Pulse test, t 300 s, duty cycle, d 2 % Littelfuse reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537