Preliminary Technical Information TM TrenchP V = -100V IXTR210P10T DSS Power MOSFET I = -195A D25 R 8m DS(on) P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings V T = 25C to 150C -100 V DSS J G V T = 25C to 150C, R = 1M -100 V Isolated Tab DGR J GS D S V Continuous 15 V GSS V Transient 25 V GSM G = Gate D = Drain S = Source I T = 25C (Chip Capability) -195 A D25 C I Lead Current Limit, RMS -160 A LRMS I T = 25C, Pulse Width Limited by T - 800 A DM C JM I T = 25C -100 A A C E T = 25C3J AS C Features dv/dt I I , V V , T 150C 10 V/ns S DM DD DSS J z Silicon Chip on Direct-Copper Bond P T = 25C 595 W D C (DCB) Substrate z Isolated Mounting Surface T - 55 ... +150 C J z 2500V~ Electrical Isolation T 150 C JM z Avalanche Rated T - 55 ... +150 C stg z Extended FBSOA T 1.6mm (0.062 in.) from Case for 10s 300 C z L Fast Intrinsic Rectifier T Plastic Body for 10s 260 C z SOLD Low R and Q DS(ON) G V 50/60 Hz, 1 Minute 2500 V~ ISOL F Mounting Force 20..120/4.5..27 N/lb. C Advantages Weight 5 g z Easy to Mount z Space Savings z High Power Density Symbol Test Conditions Characteristic Values Applications (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J z High-Side Switching BV V = 0V, I = - 250A -100 V DSS GS D z Push Pull Amplifiers V V = V , I = - 250A - 2.5 - 4.5 V z GS(th) DS GS D DC Choppers z Automatic Test Equipment I V = 15V, V = 0V 100 nA GSS GS DS z Current Regulators I V = V , V = 0V - 25 A z DSS DS DSS GS Battery Charger Applications T = 125C - 300 A J R V = -10V, I = -105A, Note 1 8 m DS(on) GS D 2013 IXYS CORPORATION, All Rights Reserved DS100398A(01/13)IXTR210P10T Symbol Test Conditions Characteristic Values ISOPLUS247 (IXTR) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = - 60A, Note 1 90 150 S fs DS D C 69.5 nF iss C V = 0V, V = - 25V, f = 1MHz 4070 pF oss GS DS C 1100 pF rss t 90 ns d(on) Resistive Switching Times t 98 ns r V = -10V, V = 0.5 V , I = -105A GS DS DSS D t 165 ns d(off) R = 1 (External) G t 55 ns f 1 = Gate Q 740 nC g(on) 2,4 = Drain Q V = -10V, V = 0.5 V , I = -105A 200 nC 3 = Source gs GS DS DSS D Q 155 nC gd R 0.21 C/W thJC R 0.15 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V - 210 A S GS I Repetitive, Pulse Width Limited by T - 840 A SM JM V I = -100A, V = 0V, Note 1 -1.4 V SD F GS t 200 ns rr I = -105A, -di/dt = -100A/s F Q 930 nC RM V = -100V, V = 0V R GS I -12.4 A RM Note 1. Pulse test, t 300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537