High Voltage V = 4500V IXTT02N450HV DSS Power MOSFET I = 200mA IXTH02N450HV D25 R 625 DS(on) TO-268HV (IXTT) N-Channel Enhancement Mode G S D (Tab) TO-247HV (IXTH) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 4500 V DSS J V T = 25 C to 150 C, R = 1M 4500 V DGR J GS V Continuous 20 V GSS V Transient 30 V GSM G S I T = 25 C 200 mA D25 C D (Tab) D I T = 25 C, Pulse Width Limited by T 600 mA DM C JM P T = 25 C 113 W D C G = Gate D = Drain S = Source Tab = Drain T - 55 ... +150 C J T 150 C JM T - 55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L T Plastic Body for 10s 260 C SOLD Features M Mounting Torque 1.13/10 Nm/lb.in d High Blocking Voltage Weight TO-268HV 4 g High Voltage Packages TO-247HV 6 g Advantages Easy to Mount Space Savings High Power Density Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J V V = V , I = 250A 4.0 6.5 V Applications GS(th) DS GS D I V = 20V, V = 0V 100 nA GSS GS DS High Voltage Power Supplies Capacitor Discharge Applications I V = 3.6kV, V = 0V 5 A DSS DS GS Pulse Circuits V = 4.5kV 10 A DS Laser and X-Ray Generation Systems V = 3.6kV T = 125C 15 A DS J R V = 10V, I = 10mA, Note 1 625 DS(on) GS D 2014 IXYS CORPORATION, All Rights Reserved DS100498C(10/14)IXTT02N450HV IXTH02N450HV Symbol Test Conditions Characteristic Values TO-268HV Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. E A E1 J L2 C2 g V = 50V, I = 50mA, Note 1 90 150 mS fs DS D 3 D1 3 D H D2 C 246 pF iss 1 2 D3 2 1 A1 L4 C V = 0V, V = 25V, f = 1MHz 19 pF oss GS DS C e e b C 5.8 pF rss R Gate Input Resistance 76 PINS: Gi 1 - Gate 2 - Source 3 - Drain t 17 ns d(on) Resistive Switching Times L3 t 48 ns r A2 V = 10V, V = 500V, I = 0.5 I GS DS D D25 L t 28 ns d(off) R = 10 (External) G t 143 ns f Q 10.6 nC g(on) Q V = 10V, V = 1kV, I = 0.5 I 3.3 nC gs GS DS D D25 Q 5.5 nC gd R 1.1 C/W thJC R TO-247HV 0.21 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 200 mA S GS TO-247HV Outline E1 E A R 0P A2 0P1 I Repetitive, Pulse Width Limited by T 800 mA SM JM Q S V I = I , V = 0V, Note 1 1.5 V SD F S GS D1 D 4 t I = 200mA, -di/dt = 50A/ s, V = 100V 1.6 s rr F R D2 1 2 3 L1 A3 D3 E2 2X E3 A1 4X L e b b1 c e1 3X 3X Note: 1. Pulse test, t 300s, duty cycle, d 2%. PINS: 1 - Gate 2 - Source 3, 4 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537