IXTY32P05T IXYS

IXTY32P05T electronic component of IXYS
IXTY32P05T IXYS
IXTY32P05T MOSFETs
IXTY32P05T  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IXTY32P05T MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXTY32P05T MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IXTY32P05T
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET TrenchP Power MOSFET
Datasheet: IXTY32P05T Datasheet (PDF)
Price (USD)
1: USD 5.7375 ea
Line Total: USD 5.74 
Availability - 258
  
Ship by Mon. 28 Jul to Wed. 30 Jul
QtyUnit Price
1$ 5.7375
10$ 3.5305
70$ 2.233
560$ 1.859

Availability 258
Ship by Mon. 28 Jul to Wed. 30 Jul
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 5.7375
10$ 3.5305
70$ 2.233
560$ 1.859

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
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We are delighted to provide the IXTY32P05T from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXTY32P05T and other electronic components in the MOSFETs category and beyond.

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TM TrenchP V = - 50V IXTY32P05T DSS I = - 32A Power MOSFET IXTA32P05T D25 R 39m DS(on) IXTP32P05T P-Channel Enhancement Mode Avalanche Rated TO-252 (IXTY) G S D (Tab) TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G V T = 25 C to 150 C - 50 V DSS J S V T = 25 C to 150 C, R = 1M - 50 V DGR J GS D (Tab) V Continuous 15 V GSS TO-220 (IXTP) V Transient 25 V GSM I T = 25 C - 32 A D25 C I T = 25 C, Pulse Width Limited by T -110 A DM C JM G D D (Tab) I T = 25 C - 32 A S A C E T = 25 C 200 mJ AS C P T = 25 C83W G = Gate D = Drain D C S = Source Tab = Drain T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L Features T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD International Standard Packages M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in d Avalanche Rated Weight TO-252 0.35 g Extended FBSOA TO-263 2.50 g Fast Intrinsic Diode TO-220 3.00 g Low R and Q DS(ON) G Advantages Symbol Test Conditions Characteristic Values Easy to Mount (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Space Savings High Power Density BV V = 0V, I = - 250A - 50 V DSS GS D V V = V , I = - 250A - 2.5 - 4.5 V GS(th) DS GS D Applications I V = 15V, V = 0V 50 nA GSS GS DS High-Side Switching I V = V , V = 0V - 3 A Push Pull Amplifiers DSS DS DSS GS T = 125C -100 A DC Choppers J Automatic Test Equipment R V = -10V, I = 0.5 I , Note 1 39 m DS(on) GS D D25 Current Regulators Battery Charger Applications 2017 IXYS CORPORATION, All Rights Reserved DS99967D(8/17)IXTY32P05T IXTA32P05T IXTP32P05T Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = 0.5 I , Note 1 11 17 S fs DS D D25 C 1975 pF iss C V = 0V, V = - 25V, f = 1MHz 315 pF oss GS DS C 160 pF rss t 20 ns d(on) Resistive Switching Times t 28 ns r V = -10V, V = - 30V, I = 0.5 I GS DS D D25 t 39 ns d(off) R = 10 (External) G t 27 ns f Q 46 nC g(on) Q V = -10V, V = 0.5 V , I = 0.5 I 19 nC gs GS DS DSS D D25 Q 11 nC gd R 1.5 C/W thJC R TO-220 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V - 32 A S GS I Repetitive, Pulse Width Limited by T -128 A SM JM V I = I , V = 0V, Note 1 -1.5 V SD F S GS t 26 ns rr I = 0.5 I , -di/dt = -100A/ s F D25 Q 21 nC RM V = - 25V, V = 0V R GS I -1.6 A RM Note 1: Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
IXS
IXYS
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IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS
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