KY2002KNC Kang Yang

KY2002KNC electronic component of Kang Yang
KY2002KNC Kang Yang
KY2002KNC MOSFETs
KY2002KNC  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of KY2002KNC MOSFETs across the USA, India, Europe, Australia, and various other global locations. KY2002KNC MOSFETs are a product manufactured by Kang Yang. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. KY2002KNC
Manufacturer: Kang Yang
Category: MOSFETs
Description: DFN-3L(1x0.6) MOSFETs ROHS
Datasheet: KY2002KNC Datasheet (PDF)
Price (USD)
20: USD 0.0268 ea
Line Total: USD 0.54 
Availability : 4384
  
Ship by Thu. 06 Nov to Wed. 12 Nov
QtyUnit Price
20$ 0.0268
200$ 0.0262
600$ 0.0258
2000$ 0.0171

Availability 4384
Ship by Thu. 06 Nov to Wed. 12 Nov
MOQ : 20
Multiples : 20
QtyUnit Price
20$ 0.0268
200$ 0.0262
600$ 0.0258
2000$ 0.0171

   
Manufacturer
Product Category
Package
Rohs
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the KY2002KNC from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the KY2002KNC and other electronic components in the MOSFETs category and beyond.

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The KY2002KNC DFN-3L(1x0.6) ROHS MOSFET is a low-voltage enhancement mode MOSFET manufactured by Kang Yang. It is made out of a thin-film silicon dielectric material, and has a small footprint, which makes it suitable for use in miniaturized circuitry. The device is controlled by a three-line gate, source and drain, and its gate threshold voltage is 0.5V above the drain voltage. The maximum drain current for the device is 2A and its maximum drain-source voltage is 18V. This device is extremely efficient, offering minimal on-resistance with an operating temperature range between -55°C and +150°C. It is RoHS compliant and manufactured in accordance with automotive-grade standards.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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