KIA30N06B KIA

KIA30N06B electronic component of KIA
KIA30N06B KIA
KIA30N06B MOSFETs
KIA30N06B  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of KIA30N06B MOSFETs across the USA, India, Europe, Australia, and various other global locations. KIA30N06B MOSFETs are a product manufactured by KIA. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. KIA30N06B
Manufacturer: KIA
Category: MOSFETs
Description: MOSFET N Trench 60V 25A (Tc) 2.5V @ 250uA 30 mO @ 15A,10V TO-251 (I-PAK) RoHS
Datasheet:
Price (USD)
1: USD 0.2663 ea
Line Total: USD 0.27 
Availability : 0
  
QtyUnit Price
1$ 0.2663
10$ 0.1948
30$ 0.1825
100$ 0.1701
500$ 0.1627
1000$ 0.1603
5025$ 0.154

Availability 0
Ship by Thu. 09 Oct to Wed. 15 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.2663
10$ 0.1948
30$ 0.1825
100$ 0.1701
500$ 0.1627
1000$ 0.1603
5025$ 0.154

   
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the KIA30N06B from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the KIA30N06B and other electronic components in the MOSFETs category and beyond.

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The KIA30N06B is a MOSFET N Trench 60V 25A (Tc) 2.5V @ 250uA 30 mO @ 15A,10V TO-251 (I-PAK) RoHS part manufactured by KIA. It has a power dissipation of 242 W, a Gate-source voltage of ±20 V, and an Operating temperature range between -55°C and 150°C. The device is an insulated-gate bipolar transistor designed to provide high current at low gate drive voltages. The device features excellent performance, low on-resistance, high speed switching, and very low total gate charge.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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