Product Information

SMK0460FN

SMK0460FN electronic component of Kodenshi

MOSFET N Trench 600V 4A (Tc) 4V @ 250uA 2.5 Ω @ 2A,10V TO-220F (TO-220IS) RoHS
Manufacturer: Kodenshi
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4089 ea
Line Total: USD 0.41

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between
Wed. 29 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

SMK0460FN
Kodenshi

1 : USD 0.4089
10 : USD 0.3386
30 : USD 0.2877
100 : USD 0.2457
500 : USD 0.2385
1000 : USD 0.2349

0 - WHS 2


Ships to you between
Wed. 29 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

SMK0460FN
Kodenshi

1 : USD 0.4596
10 : USD 0.3818
30 : USD 0.3252
100 : USD 0.2786
500 : USD 0.2708
1000 : USD 0.2667

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation Max
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Additional Infomation About Product

The SMK0460FN is a MOSFET N Trench 600V 4A (Tc) 4V @ 250uA 2.5 Ω @ 2A, 10V TO-220F (TO-220IS) RoHS manufactured by Kodenshi. It is a metal-oxide-semiconductor field-effect transistor (MOSFET) designed to switch high voltages and currents up to 600V and 4A respectively. It is an N-channel MOSFET which means it is best used for switching Negative voltage signals. It has a breakdown voltage of 600V and a maximum operating temperature of 125 degrees Celsius. The on-resistance is rated to be 2.5 O @ 2A. It is a RoHS compliant product, meaning it does not contain any hazardous substances, like lead, mercury, or hexavalent chromium. It is widely used for switchmode power supplies, audio amplifiers, motor control, and high-side power switching applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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