The LNN06R140 with MOSFET N Channel 60V 43A(Tc) 1.9V @ 250uA 15mO @ 10A,4.5V DFN5x6 RoHS is a five-terminal integrated circuit manufactured by Lonten Semiconductor. This high-performance Metal-Oxide-Semiconductor Field-Effect Transistor, or MOSFET, has a breakdown voltage of 60 volts, a drain-to-source current rating of 43A(Tc), a maximum gate-source voltage of 1.9 volts, and a maximum gate-drain leakage current of 250uA at 4.5 volts. The DFN5x6 package is RoHS compliant. This N-Channel MOSFET provides high power efficiency for applications in amplifiers, power circuits, audio amplifiers, and motor drivers.