Product Information

23K256-I/SN

Product Image X-ON

Datasheet
Memory; SRAM; 32kx8bit; 2.7÷3.6V; 20MHz; SO8; Interface: SPI

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.769 ea
Line Total: USD 1.769

3032 - Global Stock
Ships to you between
Mon. 05 Jun to Fri. 09 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1000 - Global Stock


Ships to you between Mon. 05 Jun to Fri. 09 Jun

MOQ : 100
Multiples : 100

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23K256-I/SN
Microchip

100 : USD 1.95
200 : USD 1.85
400 : USD 1.7625
800 : USD 1.675
1000 : USD 1.5875

1715 - Global Stock


Ships to you between Mon. 05 Jun to Fri. 09 Jun

MOQ : 1
Multiples : 1

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23K256-I/SN
Microchip

1 : USD 1.6305

3032 - Global Stock


Ships to you between Mon. 05 Jun to Fri. 09 Jun

MOQ : 1
Multiples : 1

Stock Image

23K256-I/SN
Microchip

1 : USD 1.769
100 : USD 1.6708
1000 : USD 1.575

400 - Global Stock


Ships to you between Mon. 05 Jun to Fri. 09 Jun

MOQ : 16
Multiples : 1

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23K256-I/SN
Microchip

16 : USD 2.0655
30 : USD 1.989
100 : USD 1.989
250 : USD 1.9125
750 : USD 1.9125

734 - Global Stock


Ships to you between Mon. 05 Jun to Fri. 09 Jun

MOQ : 1
Multiples : 1

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23K256-I/SN
Microchip

1 : USD 2.028
9 : USD 1.807
24 : USD 1.703
100 : USD 1.69

1715 - Global Stock


Ships to you between Mon. 05 Jun to Fri. 09 Jun

MOQ : 5
Multiples : 1

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23K256-I/SN
Microchip

5 : USD 1.5804

1000 - Global Stock


Ships to you between Mon. 05 Jun to Fri. 09 Jun

MOQ : 100
Multiples : 100

Stock Image

23K256-I/SN
Microchip

100 : USD 2.457
200 : USD 2.331
400 : USD 2.2208
800 : USD 2.1105
1000 : USD 2.0002

3579 - Global Stock


Ships to you between Mon. 05 Jun to Fri. 09 Jun

MOQ : 12
Multiples : 1

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23K256-I/SN
Microchip

12 : USD 3.1501
50 : USD 2.5514
100 : USD 2.3946
600 : USD 2.1096
1200 : USD 2.0436

     
Manufacturer
Microchip
Product Category
SRAM
Memory Size
256 kb it
Access Time
25 ns
Maximum Clock Frequency
20 MHz
Interface Type
SPI
Supply Voltage - Max
3.6 V
Supply Voltage - Min
2.7 V
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
SOIC - 8
Packaging
Tube
Supply Current - Max
10 mA
Organisation
32 k x 8
Hts Code
8542320051
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23A256/23K256 256K SPI Bus Low-Power Serial SRAM Device Selection Table Part Number VCC Range Page Size Temp. Ranges Packages 23K256 2.7-3.6V 32 Byte I P, SN, ST 23A256 1.7-1.95V 32 Byte I P, SN, ST Features: Description: Max. Clock 20 MHz The Microchip Technology Inc. 23X256 are 256 Kbit Serial SRAM devices. The memory is accessed via a Low-Power CMOS Technology: simple Serial Peripheral Interface (SPI) compatible - Read Current: 3 mA at 1 MHz serial bus. The bus signals required are a clock input - Standby Current: 4 A Max. at 3.6V (SCK) plus separate data in (SI) and data out (SO) 32,768 x 8-bit Organization lines. Access to the device is controlled through a Chip 32-Byte Page Select (CS) input. HOLD pin Communication to the device can be paused via the Flexible Operating modes: hold pin (HOLD). While the device is paused, transitions on its inputs will be ignored, with the - Byte read and write exception of Chip Select, allowing the host to service - Page mode (32 Byte Page) higher priority interrupts. - Sequential mode The 23X256 is available in standard packages Sequential Read/Write including 8-lead PDIP and SOIC, and advanced High Reliability packaging including 8-lead TSSOP. Temperature Ranges Supported: - Industrial (I): -40Cto +85C Package Types (not to scale) Pb-Free and RoHS Compliant, Halogen Free Pin Function Table Name Function CS Chip Select Input PDIP/SOIC/TSSOP SO Serial Data Output (P, SN, ST) VSS Ground SI Serial Data Input CS 1 8 VCC SCK Serial Clock Input SO 2 7 HOLD Hold Input HOLD NC 3 6 SCK VCC Supply Voltage VSS 4 5 SI 2009 Microchip Technology Inc. Preliminary DS22100C-page 123A256/23K256 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................4.5V All inputs and outputs w.r.t. VSS ......................................................................................................... -0.3V to VCC +0.3V Storage temperature .................................................................................................................................-40C to 125C Ambient temperature under bias.................................................................................................................-40C to 85C ESD protection on all pins...........................................................................................................................................2kV NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended period of time may affect device reliability. TABLE 1-1: DC CHARACTERISTICS Industrial (I): TA = -40C to +85C DC CHARACTERISTICS Param. (1) Sym. Characteristic Min. Typ Max. Units Test Conditions No. D001 VCC Supply voltage 1.7 1.95 V 23A256 D001 VCC Supply voltage 2.7 3.6 V 23K256 D002 VIH High-level input .7 VCC VCC V voltage +0.3 D003 VIL Low-level input -0.3 0.2xVCC V voltage D004 VOL Low-level output 0.2 VIOL = 1 mA voltage D005 VOH High-level output VCC -0.5 V IOH = -400 A voltage D006 ILI Input leakage 0.5 ACS = VCC, VIN = VSS OR VCC current D007 ILO Output leakage 0.5 ACS = VCC, VOUT = VSS OR VCC current D008 ICC Read CLK = 1 MHz SO = O 3 mA F 6 mA FCLK = 10 MHz SO = O Operating current 10 mA FCLK = 20 MHz SO = O D009 ICCS 200 500 nA CS = VCC = 1.8V, Inputs tied to VCC Standby current or VSS 1 4 A CS = VCC = 3.0V, Inputs tied to VCC or VSS D010 CINT Input capacitance 7 pF VCC = 0V, f = 1 MHz, Ta = 25C (Note 1) D011 VDR RAM data retention 1.2 V (2) voltage Note 1: This parameter is periodically sampled and not 100% tested. Typical measurements taken at room temperature (25C). 2: This is the limit to which VDD can be lowered without losing RAM data. This parameter is periodically sampled and not 100% tested. DS22100C-page 2 Preliminary 2009 Microchip Technology Inc.

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
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