MSC750SMA170S Microchip

MSC750SMA170S Silicon Carbide N-Channel Power MOSFET Product Over view The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC750SMA170S device is a 1700 V, 750 m SiC MOSFET in a TO-268 (D3PAK) package. Features The following are key features of the MSC750SMA170S device: Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, T = 175 C J(max) Fast and reliable body diode Superior avalanche rug gedness RoHS compliant Benefits The following are benefits of the MSC750SMA170S device: High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need for ex ternal freewheeling diode Lower system cost of ownership Applications The MSC750SMA170S device is designed for the following applications: PV inverter, converter, and industrial motor drives Smart grid transmission and distribution Induction heating and welding H/EV powertrain and EV charger Power supply and distribution 050-7775 MSC750SMA170S Datasheet Revision B 1Device Specific ations Device Specific ations This section shows the specific ations of the MSC750SMA170S device. Absolute Maximum Ratings The following table shows the absolute maximum ratings of the MSC750SMA170S device. Table 1 Absolute Maximum Ratings Symbol Characteristic Ratings Unit V Drain source voltage 1700 V DSS I Continuous drain current at T = 25 C 6 A D C Continuous drain current at T = 100 C 4 C 1 I Pulsed drain current 12 DM V Gate-source voltage 23 to 10 V GS P Total power dissipation at T = 25 C 63 W D C Linear derating factor 0.42 W/C Note: Repetitive rating: pulse width and case temperature limited by maximum junction temperature. 1. The following table shows the thermal and mechanical characteristics of the MSC750SMA170S device. Table 2 Thermal and Mechanical Characteristics Symbol Characteristic Min Typ Max Unit R Junction-to-case thermal resistance 1.6 2.39 C/W JC T Operating junction temperature 55 175 C J T Storage temperature 55 150 STG T Soldering temperature for 10 seconds (1.6 mm from case) 300 L Wt Package weight 0.14 oz 4.0 g 050-7775 MSC750SMA170S Datasheet Revision B 2