MCU18P10Y Features Split Gate Trench MOSFET Technology Low R & FOM DS(on) Excellent Stability and Uniformity Extremely Low Switching Loss P-CHANNEL Epoxy Meets UL 94 V-0 Flammability Rating MOSFET Halogen Free Available Upon Request By Adding Suffix-H Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range : -55C to +150C Storage Temperature Range: -55C to +150C DPAK Thermal Resistance: 105C/W Junction to Ambient Thermal Resistance: 1.75C/W Junction to Case J H Parameter Rating Symbol Unit C 1 O Drain-Source Voltage V -100 V DS 2 4 F E I Gate-Source Volltage V 20 V GS 3 M T =25C -18 A C V K Q I Continuous Drain Current D T =100C -12 A C A (1) G I -72 A Pulsed Drain Current DM L D B (2) E 100 Avalanche Energy mJ AS Total Power Dissipation P 70 W D Note: DIMENSIONS 1. Pulse Test: Pulse Width 300s,Duty Cycle 2%. INCHES MM DIM NOTE MIN MAX MIN MAX 2. T =25C, V =-50V, V =-10V, L=0.5mH, R =25. J DD G g A 0.087 0.094 2.20 2.40 B 0.000 0.005 0.00 0.13 C 0.026 0.034 0.66 0.86 Internal Structure D 0.018 0.023 0.46 0.58 E 0.256 0.264 6.50 6.70 D F 0.201 0.215 5.10 5.46 G 0.190 4.83 TYP. H 0.236 0.244 6.00 6.20 I 0.086 0.094 2.18 2.39 1.GATE G 2.DRAIN J 0.386 0.409 9.80 10.40 3.SOURCE TYP. K 0.114 2.90 4.DRAIN L 0.055 0.067 1.40 1.70 S M 0.063 1.60 TYP. O 0.043 0.051 1.10 1.30 Q 0.000 0.012 0.00 0.30 0.211 5.35 V TYP. Rev.3-2-12012020 1/5 MCCSEMI.COMMCU18P10Y Electrical Characteristics 25C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V V =0V, I =-250A Drain-Source Breakdown Voltage -100 V (BR)DSS GS D Gate-Source Leakage Current I V =0V, V =20V 100 nA GSS DS GS V =-100V, V =0V -1 A DS GS Zero Gate Voltage Drain Current I DSS V =-100V, V =0V, T =55C -5 A DS GS J V V =V , I =-250A Gate-Threshold Voltage -1 -1.8 -2.5 V GS(th) DS GS D V =-10V, I =-10A 90 110 m GS D R Drain-Source On-Resistance DS(on) V =-4.5V, I =-5A 100 130 m GS D Diode Characteristics I Continuous Body Diode Current -18 A S Diode Forward Voltage V V =0V, I =-10A -1.5 V SD GS S t Reverse Recovery Time 70 ns rr I =-5A,di/dt=100A/s S Reverse Recovery Charge Q 140 nC rr Dynamic Characteristics C Input Capacitance 1050 iss C V =-80V,V =0V,f=1MHz Output Capacitance 97 pF oss DS GS C Reverse Transfer Capacitance 18 rss Total Gate Charge Q 20 g Q V =-50V,V =-10V,I =-5A nC Gate-Source Charge DS GS D 3.9 gs Gate-Drain Charge Q 4.3 gd t Turn-On Delay Time 10 d(on) Turn-On Rise Time t 30 r V =-10V,V =-50V,R =2.5 GS DD L ns R =6 GEN t Turn-Off Delay Time 77 d(off) Turn-Off Fall Time t 81 f Rev.3-2-12012020 2/5 MCCSEMI.COM