SI1012 Features Low Threshold ESD Protected Gate Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-CHANNEL Halogen Free. Green Device (Note 1) MOSFET Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range : -55C to +150C Storage Temperature Range: -55C to +150C SOT-523 Thermal Resistance: 833C/W Junction to Ambient Thermal Resistance: 455C/W Junction to Case A Parameter Symbol Rating Unit D Drain-Source Voltage V 20 V DS 3 C B Gate-Source Volltage V 12 V GS 1 2 Continuous Drain Current I 0.5 A D E (Note 2) I 1 A Pulsed Drain Current DM (Note 3) G H J 150 T =25C mW A Total Power Dissipation P D (Note 4) K 275 mW T =25C C Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. DIMENSIONS 2. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature. INCHES MM DIM NOTE 3. This Test is Performed with no Heat Sink at T =25C. A MIN MAX MIN MAX 4.This Test is Performed with Infinite Heat Sink at T =25C. C A 0.059 0.067 1.50 1.70 B 0.030 0.033 0.75 0.85 0.057 0.069 1.45 1.75 C 0.020 0.50 TYP. D E 0.035 0.043 0.90 1.10 G 0.000 0.004 0.00 0.10 H 0.024 0.031 0.60 0.80 Internal Structure J 0.004 0.008 0.10 0.20 K 0.006 0.014 0.15 0.35 D Suggested Solder Pad Layout 1. GATE 1.0 (mm) 2. SOURCE 0.4 G 3. DRAIN 0.6 Marking: C S 1.24 0.6 0.5 Rev.3-3-12012020 1/4 MCCSEMI.COMSI1012 Electrical Characteristics 25C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V V =0V, I =250A Drain-Source Breakdown Voltage 20 V (BR)DSS GS D Gate-Source Leakage Current I V =0V, V =4.5V 1 A GSS DS GS I V =16V, V =0V Zero Gate Voltage Drain Current 100 nA DSS DS GS (Note 5) V V =V , I =250A 0.45 0.8 1.2 V Gate-Threshold Voltage GS(th) DS GS D V =4.5V, I =600mA 250 700 GS D (Note 5) R m Drain-Source On-Resistance DS(on) V =2.5V, I =500mA 330 850 GS D g V =10V, I =400mA Forward Tranconductance 1 S FS DS D (Note 6) Dynamic Characteristics C Input Capacitance 100 iss C V =16V,V =0V,f=1MHz pF Output Capacitance DS GS 16 oss Reverse Transfer Capacitance C 12 rss Q Total Gate Charge 750 g V =10V,V =4.5V,I =250mA Gate-Source Charge Q 75 nC DS GS D gs Q Gate-Drain Charge 225 gd Turn-On Delay Time t 5 d(on) V =10V, DD t Turn-On Rise Time 5 r R =47, I =200mA, ns L D Turn-Off Delay Time t 25 d(off) V =4.5V,R =10 GS G t Turn-Off Fall Time 11 f Drain-Source Body Diode Characteristics (Note 5) V I =0.15A, V =0V 1.2 V SD S GS Body Diode Voltage Note 5. Pulse Test : Pulse Width 300s, Duty Cycle 0.5%. 6. Guaranteed by Design, Not Subject to Production Testing. Rev.3-3-12012020 2/4 MCCSEMI.COM