ME2612-G MQTSUKI

ME2612-G electronic component of MQTSUKI
ME2612-G MQTSUKI
ME2612-G MOSFETs
ME2612-G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of ME2612-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. ME2612-G MOSFETs are a product manufactured by MQTSUKI. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. ME2612-G
Manufacturer: MQTSUKI
Category: MOSFETs
Description: 150V 2.2A 310mO@4.5V,2A 2.9W N Channel SOT-223-4 MOSFETs ROHS
Datasheet: ME2612-G Datasheet (PDF)
Price (USD)
1: USD 0.1853 ea
Line Total: USD 0.19 
Availability : 0
  
QtyUnit Price
1$ 0.1853
10$ 0.1813
30$ 0.1786
100$ 0.1758

Availability 0
Ship by Thu. 09 Oct to Wed. 15 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.1853
10$ 0.1813
30$ 0.1786
100$ 0.1758

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
Operating Temperature
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We are delighted to provide the ME2612-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ME2612-G and other electronic components in the MOSFETs category and beyond.

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The ME2612-G is a type of N-channel, Surface Mounted MOSFET (metal–oxide–semiconductor field-effect transistor) manufactured by MQTSUKI. This MOSFET can withstand up to 150V, has a minimal output current of 2.2A, has a total gate charge of 310mO, and a maximum source-drain voltage of 4.5V, a total power dissipated of 2.9W, and is packaged in an SOT-223-4 packaging format. This part is RoHS (Restriction of Hazardous Substances) compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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