BFU690F,115

BFU690F NPN wideband silicon RF transistor Rev. 2 14 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. 1.2 Features and benefits Low noise high linearity microwave transistor High output third-order intercept point 34 dBm at 1.8 GHz 40 GHz f silicon technology T 1.3 Applications Ka band oscillators DROs C-band high output buffer amplifier ZigBee LTE, cellular, UMTS 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-base voltage open emitter - - 16 V CBO V collector-emitter voltage open base - - 5.5 V CEO V emitter-base voltage open collector - - 2.5 V EBO I collector current -70 100mA C 1 P total power dissipation T 85 C -- 490mW tot sp h DC current gain I =20mA V =2V T =25 C90135180 FE C CE j C collector-base capacitance V =2V f=1MHz - 404 - fF CBS CB f transition frequency I =60mA V =1V f=2GHz -18 - GHz T C CE T =25 C amb 2 maximum power gain I =60mA V =1V f=1.8GHz -20.5- dB G p(max) C CE T =25 C amb NF noise figure I =15mA V =2V f=1.8GHz = -0.65- dB C CE S opt P output power at 1 dB gain compression I =70mA V =4V Z =Z =50 -22 - dBm L(1dB) C CE S L f=1.8GHz T =25 C amb 1 T is the temperature at the solder point of the emitter lead. sp 2 G is the maximum power gain, if K > 1. If K < 1 then G = Maximum Stable Gain (MSG). p(max) p(max)BFU690F NXP Semiconductors NPN wideband silicon RF transistor 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Graphic symbol 1emitter 2base 3emitter 4 collector E PE 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BFU690F - plastic surface-mounted flat pack package reverse SOT343F pinning 4 leads 4. Marking Table 4. Marking Type number Marking Description BFU690F D4* * = p : made in Hong Kong * = t : made in Malaysia * = w : made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 16 V CBO V collector-emitter voltage open base - 5.5 V CEO V emitter-base voltage open collector - 2.5 V EBO I collector current - 100 mA C 1 P total power dissipation T 85 C - 490 mW tot sp T storage temperature 65 +150 C stg T junction temperature - 150 C j 1 T is the temperature at the solder point of the emitter lead. sp BFU690F All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 2 14 March 2014 2 of 12