X-On Electronics has gained recognition as a prominent supplier of BFU690F,115 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFU690F,115 RF Bipolar Transistors are a product manufactured by Nexperia. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFU690F,115 Nexperia

BFU690F,115 electronic component of Nexperia
BFU690F,115 Nexperia
BFU690F,115 RF Bipolar Transistors
BFU690F,115  Semiconductors

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See Product Specifications
Part No. BFU690F,115
Manufacturer: Nexperia
Category: RF Bipolar Transistors
Description: Transistors RF Bipolar Single NPN 18GHz
Datasheet: BFU690F,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.0663 ea
Line Total: USD 1.07 
Availability - 32
Ship by Mon. 02 Jun to Wed. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
32
Ship by Mon. 02 Jun to Wed. 04 Jun
MOQ : 1
Multiples : 1
1 : USD 1.0663
10 : USD 0.665
25 : USD 0.5496
100 : USD 0.3872
500 : USD 0.3113
1000 : USD 0.286
3000 : USD 0.2552

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Type
Brand
Factory Pack Quantity :
Cnhts
Gain Bandwidth Product Ft
Hts Code
Mxhts
Product Type
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We are delighted to provide the BFU690F,115 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFU690F,115 and other electronic components in the RF Bipolar Transistors category and beyond.

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BFU690F NPN wideband silicon RF transistor Rev. 2 14 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. 1.2 Features and benefits Low noise high linearity microwave transistor High output third-order intercept point 34 dBm at 1.8 GHz 40 GHz f silicon technology T 1.3 Applications Ka band oscillators DROs C-band high output buffer amplifier ZigBee LTE, cellular, UMTS 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-base voltage open emitter - - 16 V CBO V collector-emitter voltage open base - - 5.5 V CEO V emitter-base voltage open collector - - 2.5 V EBO I collector current -70 100mA C 1 P total power dissipation T 85 C -- 490mW tot sp h DC current gain I =20mA V =2V T =25 C90135180 FE C CE j C collector-base capacitance V =2V f=1MHz - 404 - fF CBS CB f transition frequency I =60mA V =1V f=2GHz -18 - GHz T C CE T =25 C amb 2 maximum power gain I =60mA V =1V f=1.8GHz -20.5- dB G p(max) C CE T =25 C amb NF noise figure I =15mA V =2V f=1.8GHz = -0.65- dB C CE S opt P output power at 1 dB gain compression I =70mA V =4V Z =Z =50 -22 - dBm L(1dB) C CE S L f=1.8GHz T =25 C amb 1 T is the temperature at the solder point of the emitter lead. sp 2 G is the maximum power gain, if K > 1. If K < 1 then G = Maximum Stable Gain (MSG). p(max) p(max)BFU690F NXP Semiconductors NPN wideband silicon RF transistor 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Graphic symbol 1emitter 2base 3emitter 4 collector E PE 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BFU690F - plastic surface-mounted flat pack package reverse SOT343F pinning 4 leads 4. Marking Table 4. Marking Type number Marking Description BFU690F D4* * = p : made in Hong Kong * = t : made in Malaysia * = w : made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 16 V CBO V collector-emitter voltage open base - 5.5 V CEO V emitter-base voltage open collector - 2.5 V EBO I collector current - 100 mA C 1 P total power dissipation T 85 C - 490 mW tot sp T storage temperature 65 +150 C stg T junction temperature - 150 C j 1 T is the temperature at the solder point of the emitter lead. sp BFU690F All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 2 14 March 2014 2 of 12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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