BFU730LX & 7 2 6 NPN wideband silicon germanium RF transistor Rev. 1 8 May 2013 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a SOT883C leadless ultra small plastic SMD package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features and benefits Leadless ultra small plastic SMD package 1.0 mm 0.6 mm 0.34 mm Low noise high gain microwave transistor Noise figure (NF) = 0.75 dB at 6 GHz High maximum power gain (G ) of 15.8 dB at 6 GHz p(max) Excellent linearity in WiFi LNA from 5 GHz to 5.9 GHz: input third-order intercept point (IP3 ) = 15 dBm i input power at 1 dB gain compression (P ) = 0 dBm i(1dB) See application note AN11224: Low Noise Fast Turn ON/OFF 5-5.9GHz WiFi LNA with BFU730LX. 110 GHz f silicon germanium technology T 1.3 Applications Wi-Fi / WLAN See application notes: AN11223: Low Noise Fast Turn ON/OFF 2.4-2.5GHz WiFi LNA with BFU730LX AN11224: Low Noise Fast Turn ON/OFF 5-5.9GHz WiFi LNA with BFU730LX WiMAX LNA for GPS, GLONASS, Galileo and Compass (BeiDou) DBS (2nd LNA stage, mixer stage, DRO), SDARS RKE, AMR / Zigbee LNA for microwave communications systems Low current battery equipped applications Microwave driver / buffer applicationsBFU730LX NXP Semiconductors NPN wideband silicon germanium RF transistor 1.4 Quick reference data Table 1. Quick reference data T =25 C unless otherwise specified. j Symbol Parameter Conditions Min Typ Max Unit V collector-base voltage open emitter - - 10.0 V CB V collector-emitter voltage open base - - 3.0 V CE shorted base - - 10.0 V V emitter-base voltage open collector - - 1.3 V EB I collector current - 5 30 mA C 1 P total power dissipation T 110 C - - 160 mW tot sp h DC current gain I =2mA V =2V 205 380 555 FE C CE T =25 C j f transition frequency I =25mA V =3V -53 - GHz T C CE f= 2GHz T =25 C amb 2 G maximum power gain I =25mA V =3V - 15.8 - dB p(max) C CE f= 6GHz T =25 C amb NF noise figure I =5mA V =3V f=6 -0.75 - dB C CE GHz = S opt P output power at 1 dB I =25mA V =3V -11.7 - dBm L(1dB) C CE gain compression Z =Z =50 S L f= 1.8GHz T =25 C amb 1 T is the temperature at the solder point of the emitter lead. sp 2 G is the maximum power gain, if K > 1. If K < 1 then G = Maximum Stable Gain (MSG). p(max) p(max) 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Graphic symbol 1base 2 collector 3emitter DUVSWUDQHQ 7 Z WRS YLH DDD 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BFU730LX - leadless ultra small plastic package 3 terminals SOT883C body 1 0.6 0.34 mm BFU730LX All information provided in this document is subject to legal disclaimers. NXP B.V. 2013. All rights reserved. Product data sheet Rev. 1 8 May 2013 2 of 13