BUK6Y61-60PX Nexperia

BUK6Y61-60P 60 V, P-channel Trench MOSFET 16 March 2020 Product data sheet 1. General description P-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. This product has been designed and qualified to AEC-Q101 standard for use in high-performance automotive applications such as reverse battery protection. 2. Features and benefits High thermal power dissipation capability Suitable for thermally demanding environments due to 175 C rating Trench MOSFET technology AEC-Q101 qualified 3. Applications Reverse battery protection Power management High-side loadswitch Motor drive 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -60 V DS j V gate-source voltage 1 -20 - 20 V GS I drain current V = -10 V T = 25 C - - -25 A D GS mb P total power dissipation T = 25 C - - 66 W tot mb Static characteristics R drain-source on-state V = -10 V I = -4.7 A T = 25 C - 48 61 m DSon GS D j resistance 1 V = -20 V/+5 V according AEC-Q101 at T = 175 C V = -20 V/+20 V according AEC-Q101 at T = 150 C GS j GS jNexperia BUK6Y61-60P 60 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source 4 G gate S mb D mounting base connected 1 2 3 4 017aaa094 to drain LFPAK56 Power- SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK6Y61-60P LFPAK56 plastic, single-ended surface-mounted package 4 terminals SOT669 Power-SO8 7. Marking Table 4. Marking codes Type number Marking code BUK6Y61-60P 6Y6160P BUK6Y61-60P All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 16 March 2020 2 / 13