X-On Electronics has gained recognition as a prominent supplier of BUK762R6-60E,118 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK762R6-60E,118 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUK762R6-60E,118 Nexperia

BUK762R6-60E,118 electronic component of Nexperia
BUK762R6-60E,118 Nexperia
BUK762R6-60E,118 MOSFETs
BUK762R6-60E,118  Semiconductors

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See Product Specifications
Part No. BUK762R6-60E,118
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET N-channel TrenchMOS standard level FET
Datasheet: BUK762R6-60E,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.9125 ea
Line Total: USD 2.91 
Availability - 1236
Ship by Tue. 03 Jun to Thu. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1236
Ship by Tue. 03 Jun to Thu. 05 Jun
MOQ : 1
Multiples : 1
1 : USD 2.9125
10 : USD 2.392
100 : USD 1.958
500 : USD 1.727
800 : USD 1.694

3880
Ship by Thu. 05 Jun to Wed. 11 Jun
MOQ : 221
Multiples : 1
221 : USD 2.125
500 : USD 2.0156
1000 : USD 1.9063
10000 : USD 1.7813

4656
Ship by Thu. 05 Jun to Wed. 11 Jun
MOQ : 4800
Multiples : 800
4800 : USD 1.77

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the BUK762R6-60E,118 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK762R6-60E,118 and other electronic components in the MOSFETs category and beyond.

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BUK762R6-60E N-channel TrenchMOS standard level FET 28 July 2016 Product data sheet 1. General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits AEC Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True standard level gate with V rating of greater than 1 V at 175 C GS(th) 3. Applications 12 V Automotive systems Electric and electro-hydraulic power steering Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 60 V DS j j I drain current V = 10 V T = 25 C Fig. 2 1 - - 120 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 324 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 1.97 2.6 m DSon GS D j resistance Fig. 11 Dynamic characteristics Q gate-drain charge I = 25 A V = 48 V V = 10 V - 43.7 - nC GD D DS GS Fig. 13 Fig. 14 1 Continuous current is limited by package.Nexperia BUK762R6-60E N-channel TrenchMOS standard level FET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 G gate D 2 D drain G 3 S source mbb076 S mb D mounting base connected to 2 drain 1 3 D2PAK (SOT404) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK762R6-60E D2PAK plastic single-ended surface-mounted package SOT404 (D2PAK) 3 leads (one lead cropped) 7. Marking Table 4. Marking codes Type number Marking code BUK762R6-60E BUK762R6-60E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 60 V DS j j V drain-gate voltage R = 20 k - 60 V DGR GS V gate-source voltage T 175 C DC -20 20 V GS j P total power dissipation T = 25 C Fig. 1 - 324 W tot mb I drain current T = 25 C V = 10 V Fig. 2 1 - 120 A D mb GS T = 100 C V = 10 V Fig. 2 1 - 120 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 3 - 958 A DM mb p T storage temperature -55 175 C stg T junction temperature -55 175 C j BUK762R6-60E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 28 July 2016 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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