BUK9K25-40RAX Nexperia

BUK9K25-40RA Dual N-channel 40 V, 29 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology 2 December 2020 Product data sheet 1. General description Dual, logic level N-channel MOSFET in an LFPAK56D package, using Application Specific (ASFET) repetitive avalanche silicon technology. This product has been designed and qualified to AEC-Q101 for use in repetitive avalanche applications. 2. Features and benefits Fully automotive qualified to AEC-Q101 at 175 C Repetitive Avalanche rated to 30 C T rise: j Tested to 1 Bn avalanche events LFPAK copper clip package technology: High robustness and reliability Gull wing leads for high manufacturability and AOI 3. Applications 12 V, 24 V and 48 V automotive systems Repetitive avalanche topologies Engine control Transmission control Actuator and auxiliary loads 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 40 V DS j I drain current V = 5 V T = 25 C Fig. 2 - - 18.2 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 32 W tot mb Static characteristics FET1 and FET2 R drain-source on-state V = 5 V I = 5 A T = 25 C Fig. 14 - 24 29 m DSon GS D j resistance Dynamic characteristics FET1 and FET2 Q gate-drain charge I = 5 A V = 32 V V = 5 V - 2.4 - nC GD D DS GS T = 25 C Fig. 16 Fig. 17 jNexperia BUK9K25-40RA Dual N-channel 40 V, 29 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S1 source1 8 7 6 5 D1 D1 D2 D2 2 G1 gate1 3 S2 source2 4 G2 gate2 5 D2 drain2 S1 G1 S2 G2 6 D2 drain2 mbk725 7 D1 drain1 1 2 3 4 8 D1 drain1 LFPAK56D Dual LFPAK (SOT1205) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9K25-40RA LFPAK56D plastic, single ended surface mounted package (LFPAK56D) 8 SOT1205 Dual LFPAK leads 7. Marking Table 4. Marking codes Type number Marking code BUK9K25-40RA 92540RA 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 40 V DS j V drain-gate voltage R = 20 k - 40 V DGR GS V gate-source voltage Pulsed T 175 C 1 2 -15 15 V GS j DC T 175 C -10 10 V j P total power dissipation T = 25 C Fig. 1 - 32 W tot mb I drain current V = 5 V T = 25 C Fig. 2 - 18.2 A D GS mb V = 5 V T = 100 C Fig. 2 - 16.6 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 3 - 94 A DM p mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Source-drain diode FET1 and FET2 I source current T = 25 C - 18.2 A S mb I peak source current pulsed t 10 s T = 25 C - 94 A SM p mb BUK9K25-40RA All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 2 December 2020 2 / 13