NX138AKMYL Nexperia

NX138AKM 60 V, N-channel Trench MOSFET 12 May 2021 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless, ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection 3. Applications Relaydriver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 60 V DS j V gate-source voltage -20 - 20 V GS I drain current V = 10 V T = 25 C 1 - - 0.27 A D GS amb Static characteristics R drain-source on-state V = 10 V I = 0.19 A T = 25 C - 2.8 4.2 DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm .Nexperia NX138AKM 60 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 2 S source 1 3 D drain 3 G 2 Transparent top view DFN1006-3 (SOT883) S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name Description Version NX138AKM DFN1006-3 plastic, leadless ultra small package 3 terminals 0.35 mm SOT883 pitch 1 mm x 0.6 mm x 0.48 mm body 7. Marking Table 4. Marking codes Type number Marking code NX138AKM 6A NX138AKM All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2021. All rights reserved Product data sheet 12 May 2021 2 / 14