NX138BKMYL Nexperia

NX138BKM 60 V, N-channel Trench MOSFET 1 September 2020 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 60 V DS j V gate-source voltage -20 - 20 V GS I drain current V = 10 V T = 25 C 1 - - 380 mA D GS amb Static characteristics R drain-source on-state V = 10 V I = 380 mA T = 25 C - 1.8 2.3 DSon GS D j resistance 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm .Nexperia NX138BKM 60 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 1 3 2 S source 2 3 D drain Transparent G top view DFN1006-3 (SOT883) S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name Description Version NX138BKM DFN1006-3 plastic, leadless ultra small package 3 terminals 0.35 mm pitch SOT883 1 mm x 0.6 mm x 0.48 mm body 7. Marking Table 4. Marking codes Type number Marking code NX138BKM 6R NX138BKM All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 1 September 2020 2 / 14