NXV55UNR Nexperia

NXV55UNR electronic component of Nexperia
NXV55UNR Nexperia
NXV55UNR MOSFETs
NXV55UNR  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NXV55UNR MOSFETs across the USA, India, Europe, Australia, and various other global locations. NXV55UNR MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. NXV55UNR
Manufacturer: Nexperia
Category: MOSFETs
Description: 30V 1.9A 66mO@1.9A,4.5V N Channel TO-236AB MOSFETs ROHS
Datasheet: NXV55UNR Datasheet (PDF)
Price (USD)
1: USD 0.3487 ea
Line Total: USD 0.35 
Availability : 13547
  
Ship by Tue. 23 Sep to Thu. 25 Sep
QtyUnit Price
1$ 0.3487
10$ 0.19
100$ 0.1044
500$ 0.0869
1000$ 0.077
3000$ 0.0583
6000$ 0.055
9000$ 0.0473
24000$ 0.0462

Availability 13547
Ship by Tue. 23 Sep to Thu. 25 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.3487
10$ 0.19
100$ 0.1044
500$ 0.0869
1000$ 0.077
3000$ 0.0583
6000$ 0.055
9000$ 0.0473
24000$ 0.0462

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NXV55UNR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NXV55UNR and other electronic components in the MOSFETs category and beyond.

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NXV55UN 30 V, N-channel Trench MOSFET 19 October 2020 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology 3. Applications Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 30 V DS j V gate-source voltage -8 - 8 V GS I drain current V = 4.5 V T = 25 C t 5 s 1 - - 2.3 A D GS amb Static characteristics R drain-source on-state V = 4.5 V I = 1.9 A T = 25 C - 50 66 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm .Nexperia NXV55UN 30 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 3 1 G gate D 2 S source G 3 D drain mbb076 S 1 2 SOT23 6. Ordering information Table 3. Ordering information Type number Package Name Description Version NXV55UN SOT23 plastic, surface-mounted package 3 terminals 1.9 mm pitch 2.9 SOT23 mm x 1.3 mm x 1 mm body 7. Marking Table 4. Marking codes Type number Marking code 1 %5K NXV55UN 1 % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T = 25 C - 30 V DS j V gate-source voltage -8 8 V GS I drain current V = 4.5 V T = 25 C t 5 s 1 - 2.3 A D GS amb V = 4.5 V T = 25 C 1 - 1.9 A GS amb V = 4.5 V T = 100 C - 1.2 A GS amb I peak drain current T = 25 C single pulse t 10 s - 7.6 A DM amb p P total power dissipation T = 25 C 2 - 340 mW tot amb 1 - 480 mW T = 25 C - 2.1 W sp T junction temperature -55 150 C j T ambient temperature -55 150 C amb T storage temperature -65 150 C stg NXV55UN All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 19 October 2020 2 / 12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
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