Product Information

PMC85XP,115

PMC85XP,115 electronic component of Nexperia

Datasheet
NXP Semiconductors MOSFET 30V P-channel MOSFET
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

PMC85XP,115
Nexperia

1 : USD 0.1097
N/A

Obsolete
0 - WHS 2

MOQ : 9000
Multiples : 9000

Stock Image

PMC85XP,115
Nexperia

9000 : USD 0.1184
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1

Stock Image

PMC85XP,115
Nexperia

1 : USD 1.35
10 : USD 0.6044
100 : USD 0.3003
500 : USD 0.2257
1000 : USD 0.1695
3000 : USD 0.1447
9000 : USD 0.135
24000 : USD 0.1317
N/A

Obsolete
0 - WHS 4

MOQ : 67
Multiples : 1

Stock Image

PMC85XP,115
Nexperia

67 : USD 0.0895
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

PMC85XP 30 V P-channel MOSFET with pre-biased NPN transistor 15 May 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Trench MOSFET technology NPN transistor built-in bias resistors Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction 3. Applications Charging switch for portable devices High-side load switch USB port overvoltage protection Power management in battery-driven portables Hard disk and computing power management 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit P-channel Trench MOSFET V drain-source voltage T = 25 C - - -30 V DS j V gate-source voltage -12 - 12 V GS I drain current V = -4.5 V T = 25 C t 5 s 1 - - -3.4 A D GS amb P-channel Trench MOSFET static characteristics R drain-source on-state V = -4.5 V I = -2.6 A T = 25 C - 85 110 m DSon GS D j resistance NPN RET V collector-emitter T = 25 C open base - - 50 V CEO amb voltage I output current - - 100 mA ONexperia PMC85XP 30 V P-channel MOSFET with pre-biased NPN transistor Symbol Parameter Conditions Min Typ Max Unit NPN RET R1 bias resistor 1 3.3 4.7 6.1 k R2 bias resistor 2 - 47 - k 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad 2 for drain 6 cm 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol C G S 1 E emitter 6 5 4 2 B base 7 8 3 D drain 4 S source R2 R1 1 2 3 5 G gate Transparent top view E B D 6 C collector DFN2020-6 (SOT1118) 017aaa396 7 C collector 8 D drain 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMC85XP DFN2020-6 plastic thermal enhanced ultra thin small outline package no SOT1118 leads 6 terminals body 2 x 2 x 0.65 mm 7. Marking Table 4. Marking codes Type number Marking code PMC85XP 1K PMC85XP All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 15 May 2013 2 / 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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