PMCA14UNYL Nexperia

PMCA14UN 12 V, N-channel Trench MOSFET 6 August 2020 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DSN1010-3 (SOT8007) Surface-Mounted Device (SMD) package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Ultra small package: 0.96 0.96 0.24 mm Trench MOSFET technology 3. Applications Relay driver Battery management Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 12 V DS j V gate-source voltage -8 - 8 V GS I drain current V = 4.5 V T = 25 C t 5 s 1 - - 14 A D GS amb Static characteristics R drain-source on-state V = 4.5 V I = 5 A T = 25 C - 13.2 16 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), 4 layer copper, tin-plated and mounting pad for drain 6 cm .Nexperia PMCA14UN 12 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 1 2 2 D drain G 3 S source mbb076 S 3 Transparent top view DSN1010-3 (SOT8007) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMCA14UN DSN1010-3 chip-scale package 3 terminals body 0.96 x 0.96 x 0.24 mm SOT8007 7. Marking Table 4. Marking codes Type number Marking code PMCA14UN L EFFECTIVE PIN 1 MARKING AREA INDICATION (LASER) TYPE CODE (LASER) Top View aaa-031119 Fig. 1. DSN1010-3 (SOT8007) marking code description PMCA14UN All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 6 August 2020 2 / 15