PMCM950ENEZ Nexperia

PMCM950ENE 60 V, N-channel Trench MOSFET 13 May 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a 9 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package: 1.48 1.48 0.35 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 60 V DS j V gate-source voltage -20 - 20 V GS I drain current V = 10 V T = 25 C t 5 s 1 - - 6.1 A D GS amb Static characteristics R drain-source on-state V = 10 V I = 3 A T = 25 C - 28 41 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm .Nexperia PMCM950ENE 60 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol A1 G gate 1 2 3 D A2 S source A A3 S source G B B1 S source C B2 S source B3 S source S Transparent top view 017aaa255 C1 D drain WLCSP9 (WLCSP9 3x3) C2 D drain C3 D drain 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMCM950ENE WLCSP9 WLCSP9: wafer level chip-size package 9 bumps (3 x 3) WLCSP9 3x3 7. Marking Table 4. Marking codes Type number Marking code PMCM950ENE A1 3 2 PIN A1 INDICATION MARKING CODE (EXAMPLE) 1 A B C Top view, balls down aaa-029484 Fig. 1. WLCSP9 marking code description PMCM950ENE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 13 May 2019 2 / 14