PMEG060T030ELPE 60 V, 3 A low leakage current Trench MEGA Schottky barrier rectifier 16 December 2019 Product data sheet 1. General description Trench Maximum Efficiency General Application (MEGA) Schottky barrier rectifier encapsulated in a CFP15B (SOT1289B) power and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Average forward current: I 3 A F(AV) Reverse voltage: V 60 V R Low forward voltage Low leakage current due to Trench MEGA Schottky technology High power capability due to clip-bonding technology Small and flat lead SMD power plastic package AEC-Q101 qualified 3. Applications Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Freewheeling application Reverse polarity protection Low power consumption application Low voltage, high frequency inverters 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I average forward = 0.5 square wave f = 20 kHz T - - 3 A F(AV) sp current 167 C V reverse voltage T = 25 C - - 60 V R j V forward voltage I = 3 A pulsed T = 25 C 1 - 550 620 mV F F j I reverse current V = 10 V pulsed T = 25 C 1 - 0.14 0.9 A R R j V = 60 V pulsed T = 25 C 1 - 0.3 1.8 A R j 1 Very short pulse, in order to maintain a stable junction temperature.Nexperia PMEG060T030ELPE 60 V, 3 A low leakage current Trench MEGA Schottky barrier rectifier 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 A anode A 1 K A 2 A anode 3 aaa-009063 3 K cathode 2 CFP15B (SOT1289B) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMEG060T030ELPE CFP15B plastic, thermal enhanced ultra thin SMD package 3 leads 2.13 SOT1289B mm pitch 5.8 x 4.3 x 0.95 mm body 7. Marking Table 4. Marking codes Type number Marking code PMEG060T030ELPE 060T M03E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V reverse voltage T = 25 C - 60 V R j I forward current = 1 T 165 C - 4.2 A F sp I average forward current = 0.5 square wave f = 20 kHz T - 3 A F(AV) sp 167 C I non-repetitive peak t = 8 ms square wave T = 25 C - 60 A FSM p j(init) forward current t = 8 ms half sine wave T = 25 C - 80 A p j(init) P total power dissipation T 25 C 1 - 1.66 W tot amb 2 - 2.15 W T junction temperature - 175 C j T ambient temperature -55 175 C amb T storage temperature -65 175 C stg 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 2 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm . PMEG060T030ELPE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 16 December 2019 2 / 12