PMPB8XNX Nexperia

PMPB8XN 20 V, N-channel Trench MOSFET 24 September 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology Side wettable flanks for optical solder inspection Exposed drain pad for excellent thermal conduction 3. Applications Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 20 V DS j V gate-source voltage -8 - 8 V GS I drain current V = 4.5 V T = 25 C t 5 s 1 - - 14.3 A D GS amb Static characteristics R drain-source on-state V = 4.5 V I = 10.1 A T = 25 C - 8.5 12 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm .Nexperia PMPB8XN 20 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 D drain 1 6 2 D drain 7 2 5 G 3 G gate 3 4 4 S source 8 S 017aaa253 5 D drain Transparent top view 6 D drain DFN2020MD-6 (SOT1220) 7 D drain 8 S source 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMPB8XN DFN2020MD-6 DFN2020MD-6: plastic thermal enhanced ultra thin small outline SOT1220 package no leads 6 terminals 7. Marking Table 4. Marking codes Type number Marking code PMPB8XN 5A PMPB8XN All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 24 September 2019 2 / 14