X-On Electronics has gained recognition as a prominent supplier of PSMN013-100ES,127 mosfet across the USA, India, Europe, Australia, and various other global locations. PSMN013-100ES,127 mosfet are a product manufactured by Nexperia. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

PSMN013-100ES,127 Nexperia

PSMN013-100ES,127 electronic component of Nexperia
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See Product Specifications
Part No.PSMN013-100ES,127
Manufacturer: Nexperia
Category:MOSFET
Description: MOSFET Single NChannel 100V 272A 170W 30mOhms
Datasheet: PSMN013-100ES,127 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 2.0489
10 : USD 1.4538
100 : USD 1.1426
500 : USD 0.9883
1000 : USD 0.8428
2500 : USD 0.8125
5000 : USD 0.8125
10000 : USD 0.781
25000 : USD 0.7494
N/A

Obsolete
0 - WHS 2

MOQ : 14
Multiples : 1
14 : USD 2.6027
N/A

Obsolete
     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Continuous Drain Current
Gate-Source Voltage Max
Power Dissipation
Mounting
Drain-Source On-Res
Operating Temp Range
Package Type
Pin Count
Polarity
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
Deleted
Configuration
Transistor Type
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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PSMN013-100ES N-channel 100V 13.9m standard level MOSFET in I2PAK. Rev. 3 29 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Low conduction losses due to low Suitable for high frequency on-state resistance applications due to fast switching characteristics 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175 C - - 100 V DS j j voltage 1 I drain current T =25C V =10V --68 A D mb GS see Figure 1 P total power T = 25 C see Figure 2 --170W tot mb dissipation T junction -55 - 175 C j temperature Static characteristics R drain-source V =10V I =15A --25 m DSon GS D on-state T = 100 C see Figure 11 j resistance 2 V =10V I =15A T =25C -11 13.9m GS D j see Figure 12 see Figure 11 Dynamic characteristics Q gate-drain charge V =10V I =25A -17 -nC GD GS D V =50 V see Figure 14 DS see Figure 13PSMN013-100ES Nexperia N-channel 100V 13.9m standard level MOSFET in I2PAK. Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Q total gate charge V =10V I =25A -59 -nC G(tot) GS D V =50 V see Figure 13 DS see Figure 14 Avalanche ruggedness E non-repetitive V =10V T =25C --127mJ DS(AL)S GS j(init) drain-source I =68A V 100 V D sup avalanche energy unclamped R =50 GS 1 Continuous current is limited by package. 2 Measured 3 mm from package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 1 2 3 SOT226 (I2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN013-100ES I2PAK plastic single-ended package (I2PAK) TO-262 SOT226 PSMN013-100ES All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 3 29 September 2011 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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