PMZ1200UPE Nexperia

PMZ1200UPE electronic component of Nexperia
PMZ1200UPE Nexperia
PMZ1200UPE MOSFETs
PMZ1200UPE  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PMZ1200UPE MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMZ1200UPE MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. PMZ1200UPE
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET, P-CH, -30V, -0.41A, SOT883-3
Datasheet: PMZ1200UPE Datasheet (PDF)
Price (USD)
500: USD 0.0884 ea
Line Total: USD 44.2 
Availability : 0
  
QtyUnit Price
500$ 0.0884
1000$ 0.0731
5000$ 0.0723

Availability 0
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 500
Multiples : 1
QtyUnit Price
500$ 0.0884
1000$ 0.0731
5000$ 0.0723

   
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
LoadingGif
 
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We are delighted to provide the PMZ1200UPE from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMZ1200UPE and other electronic components in the MOSFETs category and beyond.

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PMZ1200UPE 30 V, P-channel Trench MOSFET 25 March 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching ElectroStatic Discharge (ESD) protection > 2 kV HBM Leadless ultra small SMD package: 1.0 x 0.6 x 0.48 mm 3. Applications Relay driver High-speed line driver High-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -30 V DS j V gate-source voltage -8 - 8 V GS I drain current V = -4.5 V T = 25 C 1 - - -410 mA D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -410 mA T = 25 C - 1.2 1.4 DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm . Scan or click this QR code to view the latest information for this product SOT883NXP Semiconductors PMZ1200UPE 30 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 G gate 1 3 2 S source 2 Transparent 3 D drain G top view DFN1006-3 (SOT883) S 017aaa259 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMZ1200UPE DFN1006-3 DFN1006-3: leadless ultra small plastic package 3 solder lands SOT883 7. Marking Table 4. Marking codes Type number Marking code PMZ1200UPE ZL PMZ1200UPE All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 25 March 2015 2 / 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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