Product Information

PMZ1200UPEYL

PMZ1200UPEYL electronic component of Nexperia

Datasheet
P-Channel 30 V 410mA (Ta) 310mW (Ta), 1.67W (Tc) Surface Mount SOT-883
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3301 ea
Line Total: USD 0.33

8695 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
10543 - WHS 1


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 5
Multiples : 5

Stock Image

PMZ1200UPEYL
Nexperia

5 : USD 0.076
50 : USD 0.0618
150 : USD 0.0514
500 : USD 0.0488
2500 : USD 0.0466
5000 : USD 0.0455

8695 - WHS 2


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

PMZ1200UPEYL
Nexperia

1 : USD 0.3301
10 : USD 0.2265
100 : USD 0.0954
1000 : USD 0.0621
2500 : USD 0.0552
10000 : USD 0.0495
20000 : USD 0.046
50000 : USD 0.0437
100000 : USD 0.0414

9700 - WHS 3


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 10000
Multiples : 10000

Stock Image

PMZ1200UPEYL
Nexperia

10000 : USD 0.0439
20000 : USD 0.0435
30000 : USD 0.043
50000 : USD 0.0421

19273 - WHS 4


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 184
Multiples : 1

Stock Image

PMZ1200UPEYL
Nexperia

184 : USD 0.0666
250 : USD 0.0659
500 : USD 0.0545
1000 : USD 0.0479
3000 : USD 0.0471

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

PMZ1200UPE 30 V, P-channel Trench MOSFET 25 March 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching ElectroStatic Discharge (ESD) protection > 2 kV HBM Leadless ultra small SMD package: 1.0 x 0.6 x 0.48 mm 3. Applications Relay driver High-speed line driver High-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -30 V DS j V gate-source voltage -8 - 8 V GS I drain current V = -4.5 V T = 25 C 1 - - -410 mA D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -410 mA T = 25 C - 1.2 1.4 DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm .Nexperia PMZ1200UPE 30 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 G gate 1 3 2 S source 2 Transparent 3 D drain G top view DFN1006-3 (SOT883) S 017aaa259 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMZ1200UPE DFN1006-3 DFN1006-3: leadless ultra small plastic package 3 solder lands SOT883 7. Marking Table 4. Marking codes Type number Marking code PMZ1200UPE ZL PMZ1200UPE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 25 March 2015 2 / 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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