Product Information

PMZB200UNEYL

PMZB200UNEYL electronic component of Nexperia

Datasheet
N-Channel 30 V 1.4A (Ta) 350mW (Ta), 6.25W (Tc) Surface Mount DFN1006B-3
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3301 ea
Line Total: USD 0.33

33713 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
9700 - WHS 1


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 5
Multiples : 5

Stock Image

PMZB200UNEYL
Nexperia

5 : USD 0.101
50 : USD 0.0895
150 : USD 0.0837
500 : USD 0.0794
2500 : USD 0.0678
5000 : USD 0.066

33713 - WHS 2


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

PMZB200UNEYL
Nexperia

1 : USD 0.3301
10 : USD 0.2219
100 : USD 0.1162
1000 : USD 0.0886
2500 : USD 0.0828
10000 : USD 0.0667
20000 : USD 0.0655

7891 - WHS 3


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 113
Multiples : 1

Stock Image

PMZB200UNEYL
Nexperia

113 : USD 0.0873
250 : USD 0.0863
500 : USD 0.0681
1000 : USD 0.0668

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Transistor Type
Brand
Factory Pack Quantity :
Configuration
Cnhts
Hts Code
Mxhts
Product Type
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Taric
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Additional Infomation About Product

PMZB200UNE 30 V, N-channel Trench MOSFET 12 March 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology ElectroStatic Discharge (ESD) protection: 2 kV HBM Ultra thin package profile of 0.37 mm 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 30 V DS j V gate-source voltage -8 - 8 V GS I drain current V = 4.5 V T = 25 C 1 - - 1.4 A D GS amb Static characteristics R drain-source on-state V = 4.5 V I = 1.4 A T = 25 C - 210 250 m DSon GS D j resistance 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm .Nexperia PMZB200UNE 30 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 G gate 1 3 2 S source 2 3 D drain G Transparent top view DFN1006B-3 (SOT883B) S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMZB200UNE DFN1006B-3 DFN1006B-3: leadless ultra small plastic package 3 solder SOT883B lands body 1.0 x 0.6 x 0.37 mm 7. Marking Table 4. Marking codes Type number Marking code PMZB200UNE 0101 0001 PIN 1 INDICATION READING DIRECTION READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac673 Fig. 1. DFN1006B-3 (SOT883B) binary marking code description PMZB200UNE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 12 March 2015 2 / 14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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