X-On Electronics has gained recognition as a prominent supplier of PSMN013-100BS,118 mosfet across the USA, India, Europe, Australia, and various other global locations. PSMN013-100BS,118 mosfet are a product manufactured by Nexperia. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

PSMN013-100BS,118 Nexperia

PSMN013-100BS,118 electronic component of Nexperia
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See Product Specifications
Part No.PSMN013-100BS,118
Manufacturer: Nexperia
Category:MOSFET
Description: N-Channel 100 V 68A (Tc) 170W (Tc) Surface Mount D2PAK
Datasheet: PSMN013-100BS,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

96: USD 0.8787 ea
Line Total: USD 84.36

Availability - 407
Ships to you between
Wed. 05 Jun to Tue. 11 Jun
MOQ: 96  Multiples: 1
Pack Size: 1
Availability Price Quantity
2328 - WHS 1


Ships to you between Wed. 05 Jun to Tue. 11 Jun

MOQ : 1
Multiples : 1
1 : USD 1.1137
10 : USD 1.052
25 : USD 1.0474
100 : USD 0.9755
250 : USD 0.9707
500 : USD 0.9695
1000 : USD 0.9684

2328 - WHS 2


Ships to you between Wed. 05 Jun to Tue. 11 Jun

MOQ : 800
Multiples : 800
800 : USD 1.0796

2328 - WHS 3


Ships to you between Wed. 05 Jun to Tue. 11 Jun

MOQ : 8
Multiples : 1
8 : USD 1.1137
10 : USD 1.052
25 : USD 1.0474
100 : USD 0.9755
250 : USD 0.9707
500 : USD 0.9695
1000 : USD 0.9684

407 - WHS 4


Ships to you between Wed. 05 Jun to Tue. 11 Jun

MOQ : 96
Multiples : 1
96 : USD 0.8787

2328 - WHS 5


Ships to you between Wed. 05 Jun to Tue. 11 Jun

MOQ : 800
Multiples : 800
800 : USD 1.0796

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the PSMN013-100BS,118 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN013-100BS,118 and other electronic components in the MOSFET category and beyond.

PSMN013-100BS N-channel 100V 13.9m standard level MOSFET in D2PAK 21 February 2014 Product data sheet 1. General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduction losses Suitable for standard level gate drive 3. Applications DC-to-DC converters Load switching Motor control Server power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current T = 25 C V = 10 V Fig. 2 1 - - 68 A D mb GS P total power dissipation T = 25 C Fig. 1 - - 170 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 10 V I = 15 A T = 100 C - 19.4 25 m DSon GS D j resistance Fig. 12 Fig. 13 V = 10 V I = 15 A T = 25 C - 10.8 13.9 m GS D j Fig. 13 Dynamic characteristics Q gate-drain charge V = 10 V I = 25 A V = 50 V - 17 23.8 nC GD GS D DS Fig. 15 Fig. 14 Q total gate charge V = 10 V I = 25 A V = 50 V - 59 83 nC G(tot) GS D DS Fig. 14 Fig. 15Nexperia PSMN013-100BS N-channel 100V 13.9m standard level MOSFET in D2PAK Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive drain- V = 10 V T = 25 C I = 68 A - - 127 mJ DS(AL)S GS j(init) D source avalanche V 100 V unclamped R = 50 sup GS energy 1 Continuous current is limited by package 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 G gate D 2 D drain 1 G 3 S source mbb076 S mb D mounting base connected to 2 drain 1 3 D2PAK (SOT404) 1 It is not possible to make connection to pin 2. 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN013-100BS D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 7. Marking Table 4. Marking codes Type number Marking code PSMN013-100BS PSMN013-100BS 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage T 175 C T 25 C R = 20 k - 100 V DGR j j GS PSMN013-100BS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 21 February 2014 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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