Product Information

PSMN013-30MLC

PSMN013-30MLC electronic component of Nexperia

Datasheet
MOSFET, N-CH, 30V, 39A, LFPAK33
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7666 ea
Line Total: USD 0.77

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 1
Multiples : 1

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PSMN013-30MLC
Nexperia

1 : USD 0.7666
10 : USD 0.6282
100 : USD 0.4454
500 : USD 0.3487
1000 : USD 0.3105
5000 : USD 0.2918

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
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Additional Infomation About Product

PSMN013-30MLC N-channel 30 V 13.6 m logic level MOSFET in LFPAK33 using NextPower Technology Rev. 4 15 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Low parasitic inductance and Ultra low QG, QGD, & QOSS for high resistance system efficiencies at low and high loads Optimised for 4.5V Gate drive utilising NextPower Superjunction technology 1.3 Applications DC-to-DC converters Synchronous buck regulator Load switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit drain-source voltage T = 25 C - - 30 V V DS j drain current T =25C V =10V see Figure 1 --39 A I D mb GS total power dissipation T =25C see Figure 2 --38 W P tot mb junction temperature -55 - 175 C T j Static characteristics drain-source on-state V =4.5 V I =10A T =25C -14.6516.9m R DSon GS D j resistance see Figure 10 V =10V I =10A T =25C -11.813.6m GS D j see Figure 10 Dynamic characteristics Q gate-drain charge V =4.5 V I =10A V =15V -1 -nC GD GS D DS see Figure 12 see Figure 13 total gate charge V =4.5 V I =10A V =15V -3.7 -nC Q G(tot) GS D DS see Figure 12 see Figure 13 LFPAK33PSMN013-30MLC NXP Semiconductors N-channel 30 V 13.6 m logic level MOSFET in LFPAK33 using NextPower Technology 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to drain 142 3 SOT1210 (LFPAK33) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN013-30MLC LFPAK33 Plastic single ended surface mounted package (LFPAK33) SOT1210 4 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T = 25 C - 30 V DS j V gate-source voltage -20 20 V GS I drain current V =10V T =25C see Figure 1 -39 A D GS mb V =10V T = 100 C see Figure 1 -28 A GS mb I peak drain current pulsed t 10 s T =25C - 157 A DM p mb see Figure 4 P total power dissipation T =25C see Figure 2 -38 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering temperature - 260 C sld(M) V electrostatic discharge voltage MM (JEDEC JESD22-A115) 100 - V ESD Source-drain diode I source current T =25C - 34 A S mb I peak source current pulsed t 10 s T = 25 C - 157 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10V T =25C I =39A -5.6 mJ DS(AL)S GS j(init) D avalanche energy V 30 V R =50 unclamped sup GS see Figure 3 PSMN013-30MLC All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 4 15 June 2012 2 of 14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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