Product Information

PSMN013-30YLC,115

PSMN013-30YLC,115 electronic component of Nexperia

Datasheet
MOSFET N-CH 30 V 13.6 MOHMS LOGIC LEVEL MOSFET
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7981 ea
Line Total: USD 0.8

25176 - Global Stock
Ships to you between
Fri. 24 May to Tue. 28 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
15677 - WHS 1


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 1
Multiples : 1
1 : USD 0.5831
10 : USD 0.498
100 : USD 0.3473
500 : USD 0.2771
1000 : USD 0.2622
1500 : USD 0.2012
9000 : USD 0.2001
24000 : USD 0.1817

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

PSMN013-30YLC N-channel 30 V 13.6 m logic level MOSFET in LFPAK using NextPower technology Rev. 3 24 October 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Power SO8 package, Optimised for 4.5V Gate drive utilising qualified to 175C NextPower Superjunction technology Low parasitic inductance and Ultra low QG, QGD, & QOSS for high resistance system efficiencies at low and high loads 1.3 Applications DC-to-DC converters Synchronous buck regulator Load switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175C --30 V DS j I drain current T =25 C V =10V see Figure 1 --32 A D mb GS P total power dissipation T =25 C see Figure 2 --26 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =4.5 V I =10A T =25C - 14.4 16.9 m DSon GS D j resistance see Figure 12 V =10 V I =10A T =25C - 11.6 13.6 m GS D j see Figure 12 Dynamic characteristics Q gate-drain charge V =4.5 V I =10A V =15V -1.2 -nC GD GS D DS see Figure 14 see Figure 15 Q total gate charge V =4.5 V I =10A V =15V -4 -nC G(tot) GS D DS see Figure 14 see Figure 15PSMN013-30YLC Nexperia N-channel 30 V 13.6 m logic level MOSFET in LFPAK using NextPower technology 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to drain 1234 SOT669 (LFPAK Power-SO8) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN013-30YLC LFPAK Power-SO8 plastic single-ended surface-mounted package 4 leads SOT669 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 30 V DS j V drain-gate voltage 25 C T 175 C R =20k -30 V DGR j GS V gate-source voltage -20 20 V GS I drain current V =10V T =25C see Figure 1 -32 A D GS mb V =10V T = 100 C see Figure 1 -23 A GS mb I peak drain current pulsed t 10 s T =25C - 130 A DM p mb see Figure 4 P total power dissipation T =25C see Figure 2 -26 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering temperature - 260 C sld(M) V electrostatic discharge voltage MM (JEDEC JESD22-A115) 130 - V ESD Source-drain diode I source current T =25C - 23 A S mb I peak source current pulsed t 10 s T = 25 C - 130 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10V T =25C I =32A -7 mJ DS(AL)S GS j(init) D avalanche energy V 30 V R =50 unclamped sup GS see Figure 3 PSMN013-30YLC All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 3 24 October 2011 2 of 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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