X-On Electronics has gained recognition as a prominent supplier of PSMN018-80YS.115 mosfet across the USA, India, Europe, Australia, and various other global locations. PSMN018-80YS.115 mosfet are a product manufactured by Nexperia. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

PSMN018-80YS.115

PSMN018-80YS.115 electronic component of Nexperia
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See Product Specifications
Part No.PSMN018-80YS.115
Manufacturer: Nexperia
Category:MOSFET
Description: MOSFET N Trench 80V 45A (Tc) 4V @ 1mA 18 mΩ @ 5A,10V SOT-669 RoHS
Datasheet: PSMN018-80YS.115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.1103 ea
Line Total: USD 1.11

Availability - 10098
Ships to you between
Fri. 31 May to Thu. 06 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
10098 - WHS 1


Ships to you between Fri. 31 May to Thu. 06 Jun

MOQ : 1
Multiples : 1
1 : USD 1.1435
10 : USD 0.9291
25 : USD 0.9212
100 : USD 0.7101
250 : USD 0.7052
500 : USD 0.5902
1000 : USD 0.4293
3000 : USD 0.425
6000 : USD 0.4146

     
Manufacturer
Product Category
Kind Of Package
Mounting
Polarisation
Case
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Gate Charge
Power Dissipation
Category
Brand Category
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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PSMN018-80YS N-channel LFPAK 80 V 18 m standard level MOSFET Rev. 02 28 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low Improved mechanical and thermal RDSon and low gate charge characteristics High efficiency gains in switching LFPAK provides maximum power power converters density in a Power SO8 package 1.3 Applications DC-to-DC converters Motor control Lithium-ion battery protection Server power supplies Load switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 80 V DS j j I drain current T =25C V =10V --45 A D mb GS see Figure 1 P total power dissipation T =25C see Figure 2 --89 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =10V I =5A --28 m DSon GS D resistance T = 100 C see Figure 12 j V =10V I =5A - 1518m GS D T =25C see Figure 12 j see Figure 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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