Product Information

PSMN2R1-40PLQ

PSMN2R1-40PLQ electronic component of Nexperia

Datasheet
NXP Semiconductors MOSFET N-Channel MOSFET
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 5000
Multiples : 5000

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PSMN2R1-40PLQ
Nexperia

5000 : USD 1.8261
10000 : USD 1.8144
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qg - Gate Charge
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

PSMN2R1-40PL N-channel 40 V, 2.2 m logic level MOSFET in SOT78 1 February 2013 Product data sheet 1. General description Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits High efficiency due to low switching & conduction losses Robust construction for demanding applications Logic level gate 3. Applications Battery-powered tools Load switching Motor control Uninterruptible power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 40 V DS j j I drain current V = 10 V T = 25 C Fig. 1 1 - - 150 A D GS mb P total power dissipation T = 25 C Fig. 2 - - 293 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 1.8 2.2 m DSon GS D j resistance Fig. 11 Dynamic characteristics Q total gate charge V = 10 V I = 25 A V = 32 V - 168.9 - nC G(tot) GS D DS Fig. 13 Fig. 14 Q gate-drain charge - 29.6 - nC GD Avalanche ruggedness E non-repetitive drain- I = 150 A V 40 V R = 50 - - 490.3 mJ DS(AL)S D sup GS source avalanche V = 10 V T = 25 C unclamped GS j(init) energy Fig. 3 1 Continuous current is limited by package.Nexperia PSMN2R1-40PL N-channel 40 V, 2.2 m logic level MOSFET in SOT78 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain G 3 S source mbb076 S 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN2R1-40PL TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB 7. Marking Table 4. Marking codes Type number Marking code PSMN2R1-40PL PSMN2R1-40PL 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 40 V DS j j V drain-gate voltage R = 20 k - 40 V DGR GS V gate-source voltage -20 20 V GS I drain current T = 100 C V = 10 V Fig. 1 1 - 150 A D mb GS T = 25 C V = 10 V Fig. 1 1 - 150 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 4 - 1075 A DM mb p PSMN2R1-40PL All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 1 February 2013 2 / 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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