PSMN1R9-40PLQ Nexperia

PSMN1R9-40PLQ electronic component of Nexperia
PSMN1R9-40PLQ Nexperia
PSMN1R9-40PLQ MOSFETs
PSMN1R9-40PLQ  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PSMN1R9-40PLQ MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN1R9-40PLQ MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. PSMN1R9-40PLQ
Manufacturer: Nexperia
Category: MOSFETs
Description: NXP Semiconductors MOSFET N-channel 40 V 1.7 mOhm MOSFET
Datasheet: PSMN1R9-40PLQ Datasheet (PDF)
Price (USD)
1: USD 4.9375 ea
Line Total: USD 4.94 
Availability : 0
  
QtyUnit Price
1$ 4.9375
10$ 3.082
100$ 2.2
500$ 2.189
1000$ 2.002
2500$ 1.958
5000$ 1.947

Availability 0
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 5000
Multiples : 1
QtyUnit Price
5000$ 3.1777
6000$ 3.1462
10000$ 3.1147
12000$ 3.0832
15000$ 3.053
20000$ 3.0215
25000$ 2.9912
30000$ 2.9623
50000$ 2.932


Availability 0
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.9846
10$ 2.5757
100$ 2.1101
500$ 1.7963
1000$ 1.515
2000$ 1.4392
5000$ 1.3851


Availability 0
Ship by Thu. 23 Oct to Mon. 27 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 4.9375
10$ 3.082
100$ 2.2
500$ 2.189
1000$ 2.002
2500$ 1.958
5000$ 1.947

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMN1R9-40PLQ from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN1R9-40PLQ and other electronic components in the MOSFETs category and beyond.

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PSMN1R9-40PL N-channel 40 V, 1.7 m logic level MOSFET in SOT78 1 February 2013 Product data sheet 1. General description Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits High efficiency due to low switching & conduction losses Robust construction for demanding applications Logic level gate 3. Applications Battery-powered tools Load switching Motor control Uninterruptible power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 40 V DS j j I drain current V = 10 V T = 25 C Fig. 1 1 - - 150 A D GS mb P total power dissipation T = 25 C Fig. 2 - - 349 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 1.4 1.7 m DSon GS D j resistance Fig. 11 Dynamic characteristics Q total gate charge V = 10 V I = 25 A V = 32 V - 230 - nC G(tot) GS D DS Fig. 13 Fig. 14 Q gate-drain charge - 40.9 - nC GD Avalanche ruggedness E non-repetitive drain- I = 150 A V 40 V R = 50 - - 801.1 mJ DS(AL)S D sup GS source avalanche V = 10 V T = 25 C unclamped GS j(init) energy Fig. 3 1 Continuous current is limited by package.Nexperia PSMN1R9-40PL N-channel 40 V, 1.7 m logic level MOSFET in SOT78 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain G 3 S source mbb076 S 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN1R9-40PL TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB 7. Marking Table 4. Marking codes Type number Marking code PSMN1R9-40PL PSMN1R9-40PL 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 40 V DS j j V drain-gate voltage R = 20 k - 40 V DGR GS V gate-source voltage -20 20 V GS I drain current T = 100 C V = 10 V Fig. 1 1 - 150 A D mb GS T = 25 C V = 10 V Fig. 1 1 - 150 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 4 - 1332 A DM mb p PSMN1R9-40PL All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 1 February 2013 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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