Product Information

PSMN2R0-60ES.127

Name: PSMN2R0-60ES.127
Brand: Nexperia
SKU: PSMN2R060ES127_1_Nexperia
Availability: OutOfStock
Rating: 5 (11 reviews)

PSMN2R0-60ES.127 electronic component of Nexperia

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Datasheet

Transistor: N-MOSFET; unipolar; 60V; 120A; 338W; I2PAK

Manufacturer: Nexperia

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 2.1811 ea
Line Total: USD 2.18

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Fri. 24 May to Thu. 30 May MOQ : 1 Multiples : 1 PSMN2R0-60ES.127 Nexperia	1 : USD 2.1666 3 : USD 1.9211 8 : USD 1.9066 10 : USD 1.7911

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Additional Infomation About Product

PSMN2R0-60ES.127 is a N-Channel Power MOSFET from Nexperia. It has a drain-source voltage of 60V and is capable of handling up to 127A of continuous current. The maximum power dissipation is 162W. It has an RDS(on) of 0.022O and a gate threshold voltage of 2.4V. The package type is DPAK, which is a through-hole mountable package.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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Manufacturer Nexperia Nexperia
Product Category MOSFET MOSFET
Kind Of Package TUBE TUBE
Case I2pak I2pak
Mounting Tht Tht
Polarisation Unipolar Unipolar
Type Of Transistor N - Mosfet N - Mosfet
Drain-Source Voltage 60 V 60 V
Drain Current 120 A 120 A
Gate-Source Voltage 20 V 20 V
On-State Resistance 5.1 mOhms 5.1 mOhms
Gate Charge 137 nC 137 nC
Power Dissipation 338 W 338 W