X-On Electronics has gained recognition as a prominent supplier of PSMN2R0-60PS,127 mosfet across the USA, India, Europe, Australia, and various other global locations. PSMN2R0-60PS,127 mosfet are a product manufactured by Nexperia. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

PSMN2R0-60PS,127

PSMN2R0-60PS,127 electronic component of Nexperia
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See Product Specifications
Part No.PSMN2R0-60PS,127
Manufacturer: Nexperia
Category:MOSFET
Description: MOSFET N-Ch 60V 2.2 mOhms
Datasheet: PSMN2R0-60PS,127 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.1646 ea
Line Total: USD 4.16

Availability - 10634
Ships to you between
Wed. 05 Jun to Fri. 07 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8250 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 5.6599
10 : USD 4.5883
100 : USD 3.7095
500 : USD 3.1687
1000 : USD 3.0956

10634 - WHS 2


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 4.0365
10 : USD 3.45
50 : USD 2.898
100 : USD 2.576
250 : USD 2.553
500 : USD 2.4265
1000 : USD 2.208
5000 : USD 2.162

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We proudly offer the PSMN2R0-60PS,127 MOSFET at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the PSMN2R0-60PS,127 MOSFET.

PSMN2R0-60PS N-channel 60 V 2.2 m standard level MOSFET in TO-220 26 October 2020 Product data sheet 1. General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduction losses Robust construction for demanding applications Standard level gate 3. Applications DC-to-DC converters Load switching Motor control Server power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 60 V DS j I drain current V = 10 V T = 100 C Fig. 2 1 - - 120 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 338 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C 2 - 1.8 2.2 m DSon GS D j resistance Fig. 12 V = 10 V I = 25 A T = 100 C - 3 3.5 m GS D j Fig. 12 Fig. 13 Dynamic characteristics Q gate-drain charge I = 75 A V = 30 V V = 10 V - 32 45 nC GD D DS GS Fig. 14 Fig. 15 Q total gate charge - 137 192 nC G(tot) Avalanche ruggedness E non-repetitive drain- I = 120 A V 60 V R = 50 - - 913 mJ DS(AL)S D sup GS source avalanche V = 10 V T = 25 C Unclamped GS j(init) energy 1 Continuous current limited by package 2 Measured 3 mm from package.Nexperia PSMN2R0-60PS N-channel 60 V 2.2 m standard level MOSFET in TO-220 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain G 3 S source mb D mounting base connected mbb076 S to drain 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN2R0-60PS TO-220AB plastic, single-ended package (heatsink mounted, 1 mounting SOT78 hole) 3 leads 2.54 mm pitch 15.6 mm x 10 mm x 4.4 mm body 7. Marking Table 4. Marking codes Type number Marking code PSMN2R0 PSMN2R0-60PS 60PS 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 60 V DS j V drain-gate voltage 25 C T 175 C R = 20 k - 60 V DGR j GS V gate-source voltage -20 20 V GS P total power dissipation T = 25 C Fig. 1 - 338 W tot mb I drain current V = 10 V T = 100 C Fig. 2 1 - 120 A D GS mb V = 10 V T = 25 C Fig. 2 1 - 120 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 3 - 1135 A DM p mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering - 260 C sld(M) temperature PSMN2R0-60PS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 26 October 2020 2 / 11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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