PSMN2R0-60PS,127 Nexperia

PSMN2R0-60PS,127 electronic component of Nexperia
PSMN2R0-60PS,127 Nexperia
PSMN2R0-60PS,127 MOSFETs
PSMN2R0-60PS,127  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PSMN2R0-60PS,127 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN2R0-60PS,127 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. PSMN2R0-60PS,127
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET N-Ch 60V 2.2 mOhms
Datasheet: PSMN2R0-60PS,127 Datasheet (PDF)
Price (USD)
1: USD 4.6625 ea
Line Total: USD 4.66 
Availability : 0
  
QtyUnit Price
1$ 4.6625
10$ 2.6795
100$ 2.2
500$ 2.2
1000$ 2.189
10000$ 2.178
25000$ 2.167

Availability 0
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 5000
Multiples : 1
QtyUnit Price
5000$ 2.3423


Availability 0
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 5.2
10$ 4.4844
100$ 3.6742
500$ 3.1277
1000$ 2.6378
2000$ 2.506
5000$ 2.4118


Availability 0
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 5.4857
10$ 4.4472
100$ 3.5954
500$ 3.0712
1000$ 3.0004


Availability 0
Ship by Thu. 23 Oct to Mon. 27 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 4.6625
10$ 2.6795
100$ 2.2
500$ 2.2
1000$ 2.189
10000$ 2.178
25000$ 2.167

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMN2R0-60PS,127 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN2R0-60PS,127 and other electronic components in the MOSFETs category and beyond.

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PSMN2R0-60PS N-channel 60 V 2.2 m standard level MOSFET in TO-220 26 October 2020 Product data sheet 1. General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduction losses Robust construction for demanding applications Standard level gate 3. Applications DC-to-DC converters Load switching Motor control Server power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 60 V DS j I drain current V = 10 V T = 100 C Fig. 2 1 - - 120 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 338 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C 2 - 1.8 2.2 m DSon GS D j resistance Fig. 12 V = 10 V I = 25 A T = 100 C - 3 3.5 m GS D j Fig. 12 Fig. 13 Dynamic characteristics Q gate-drain charge I = 75 A V = 30 V V = 10 V - 32 45 nC GD D DS GS Fig. 14 Fig. 15 Q total gate charge - 137 192 nC G(tot) Avalanche ruggedness E non-repetitive drain- I = 120 A V 60 V R = 50 - - 913 mJ DS(AL)S D sup GS source avalanche V = 10 V T = 25 C Unclamped GS j(init) energy 1 Continuous current limited by package 2 Measured 3 mm from package.Nexperia PSMN2R0-60PS N-channel 60 V 2.2 m standard level MOSFET in TO-220 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain G 3 S source mb D mounting base connected mbb076 S to drain 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN2R0-60PS TO-220AB plastic, single-ended package (heatsink mounted, 1 mounting SOT78 hole) 3 leads 2.54 mm pitch 15.6 mm x 10 mm x 4.4 mm body 7. Marking Table 4. Marking codes Type number Marking code PSMN2R0 PSMN2R0-60PS 60PS 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 60 V DS j V drain-gate voltage 25 C T 175 C R = 20 k - 60 V DGR j GS V gate-source voltage -20 20 V GS P total power dissipation T = 25 C Fig. 1 - 338 W tot mb I drain current V = 10 V T = 100 C Fig. 2 1 - 120 A D GS mb V = 10 V T = 25 C Fig. 2 1 - 120 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 3 - 1135 A DM p mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering - 260 C sld(M) temperature PSMN2R0-60PS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 26 October 2020 2 / 11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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