X-On Electronics has gained recognition as a prominent supplier of PSMN4R3-80ES,127 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN4R3-80ES,127 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN4R3-80ES,127 Nexperia

PSMN4R3-80ES,127 electronic component of Nexperia
PSMN4R3-80ES,127 Nexperia
PSMN4R3-80ES,127 MOSFETs
PSMN4R3-80ES,127  Semiconductors

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See Product Specifications
Part No. PSMN4R3-80ES,127
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET N-Ch 80V 4.3 mOhms
Datasheet: PSMN4R3-80ES,127 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
215: USD 2.1875 ea
Line Total: USD 470.31 
Availability - 970
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ: 215  Multiples: 1
Pack Size: 1
Availability Price Quantity
970
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 215
Multiples : 1
215 : USD 2.1875
500 : USD 1.9687
1000 : USD 1.8125
10000 : USD 1.625
100000 : USD 1.3564

475
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 215
Multiples : 1
215 : USD 2.1875
500 : USD 1.9687
1000 : USD 1.8125
10000 : USD 1.625
100000 : USD 1.3564

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Continuous Drain Current
Gate-Source Voltage Max
Mounting
Drain-Source On-Res
Operating Temp Range
Package Type
Pin Count
Polarity
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
Deleted
Configuration
Transistor Type
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMN4R3-80ES,127 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN4R3-80ES,127 and other electronic components in the MOSFETs category and beyond.

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PSMN4R3-80ES N-channel 80 V, 4.3 m standard level MOSFET in I2PAK Rev. 02 18 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses 1.3 Applications DC-to-DC converters Motor control Load switch Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 80 V DS j j 1 I drain current T =25C V =10V - - 120 A D mb GS see Figure 1 total power T =25C see Figure 2 - - 306 W P tot mb dissipation T junction temperature -55 - 175 C j Static characteristics 2 R drain-source V =10V I =25A -3.7 4.3 m DSon GS D on-state resistance T = 25 C see Figure 13 j 2 V =10V I =25A -6.1 7.1 m GS D T =100 C see Figure 12 j Dynamic characteristics gate-drain charge V =10V I =75A -28 -nC Q GD GS D V = 40 V see Figure 14 DS total gate charge - 111 - nC Q G(tot) see Figure 15 Avalanche ruggedness E non-repetitive V =10V T =25C - - 676 mJ DS(AL)S GS j(init) drain-source I = 120 A V 80 V D sup avalanche energy R =50 unclamped GSPSMN4R3-80ES Nexperia N-channel 80 V, 4.3 m standard level MOSFET in I2PAK 1 Continuous current is limited by package. 2 Measured 3 mm from package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D drain mbb076 S 1 2 3 SOT226 (I2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN4R3-80ES I2PAK plastic single-ended package (I2PAK) TO-262 SOT226 PSMN4R3-80ES All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 02 18 April 2011 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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