PSMN2R0-30YL,115 Nexperia

PSMN2R0-30YL,115 electronic component of Nexperia
PSMN2R0-30YL,115 Nexperia
PSMN2R0-30YL,115 MOSFETs
PSMN2R0-30YL,115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PSMN2R0-30YL,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN2R0-30YL,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. PSMN2R0-30YL,115
Manufacturer: Nexperia
Category: MOSFETs
Description: N-Channel 30 V 100A (Tc) 97W (Tc) Surface Mount LFPAK56, Power-SO8
Datasheet: PSMN2R0-30YL,115 Datasheet (PDF)
Price (USD)
1: USD 1.8 ea
Line Total: USD 1.8 
Availability : 0
  
QtyUnit Price
1$ 1.8
10$ 1.224
100$ 0.6699
1500$ 0.6094
3000$ 0.6006
9000$ 0.5995
24000$ 0.5357

Availability 0
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 0.6427


Availability 0
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 915
Multiples : 1
QtyUnit Price
915$ 0.2843
930$ 0.2798
946$ 0.2751
962$ 0.2705


Availability 0
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.2647
10$ 2.8269
100$ 2.2723
500$ 1.8669


Availability 0
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.2647
10$ 2.8269
100$ 2.2723
500$ 1.8669


Availability 0
Ship by Thu. 23 Oct to Mon. 27 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.8
10$ 1.224
100$ 0.6699
1500$ 0.6094
3000$ 0.6006
9000$ 0.5995
24000$ 0.5357


Availability 0
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.0053
10$ 0.9821
30$ 0.9686
100$ 0.953


Availability 0
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 930
Multiples : 1
QtyUnit Price
930$ 0.2798
946$ 0.2751
962$ 0.2705


Availability 0
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 1060
Multiples : 1
QtyUnit Price
1060$ 0.2453
1078$ 0.2413
1096$ 0.2373


Availability 0
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 1060
Multiples : 1
QtyUnit Price
1060$ 0.2453
1078$ 0.2413
1096$ 0.2373


Availability 0
Ship by Thu. 23 Oct to Mon. 27 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.7912
5$ 1.6011
13$ 1.2104
36$ 1.1439


Availability 0
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 1.6042
3000$ 1.4402
7500$ 1.3868
10500$ 1.3513


Availability 0
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 1060
Multiples : 1
QtyUnit Price
1060$ 0.2453
1078$ 0.2413
1096$ 0.2373


Availability 0
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 161
Multiples : 161
QtyUnit Price
161$ 0.4671

   
Manufacturer
Product Category
RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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We are delighted to provide the PSMN2R0-30YL,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN2R0-30YL,115 and other electronic components in the MOSFETs category and beyond.

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PSMN2R0-30YL N-channel 30 V 2 m logic level MOSFET in LFPAK Rev. 4 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits High efficiency due to low switching Suitable for logic level gate drive and conduction losses sources 1.3 Applications Class-D amplifiers Motor control DC-to-DC converters Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --30 V DS j j voltage 1 drain current T =25C V =10V --100A I D mb GS see Figure 1 see Figure 3 P total power T = 25 C see Figure 2 --97 W tot mb dissipation T junction -55 - 175 C j temperature Static characteristics drain-source V =10V I =15A -1.552 m R DSon GS D on-state T =25C j resistance Dynamic characteristics Q gate-drain charge V =4.5 V I =10A -7.5 -nC GD GS D V =12 V see Figure 14 DS see Figure 15PSMN2R0-30YL Nexperia N-channel 30 V 2 m logic level MOSFET in LFPAK Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Q total gate charge V =4.5 V I =10A -30 -nC G(tot) GS D V =12 V see Figure 14 DS Avalanche ruggedness E non-repetitive V =10V T =25C --151mJ DS(AL)S GS j(init) drain-source I =100 A V 30 V D sup avalanche energy R =50 unclamped GS 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN2R0-30YL LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 PSMN2R0-30YL All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 4 10 March 2011 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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