PSMN3R3-40MSH N-channel 40 V, 3.3 m, standard level MOSFET in LFPAK33 using NextPower-S3 technology 11 November 2019 Product data sheet 1. General description 118 A, standard level N-channel enhancement mode MOSFET in 175 C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies. 2. Features and benefits Avalanche rated, 100% tested NextPower-S3 technology delivers superfast switching with soft body-diode recovery Low Q , Q and Q for high system efficiency, especially at high switching frequencies rr G GD Low spiking and ringing for low EMI designs High reliability clip bonded and solder die attach Mini Power SO8 package no glue, no wire bonds, qualified to 175 C Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints Low parasitic inductance and resistance 3. Applications Secondary side synchronous rectification DC-to-DC converters Brushless DC motor drive LED lighting 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 40 V DS j I drain current V = 10 V T = 25 C Fig. 2 1 - - 118 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 101 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 2.6 3.3 m DSon GS D j resistance Fig. 10 Dynamic characteristics Q gate-drain charge I = 25 A V = 20 V V = 10 V 1.4 4.8 9.6 nC GD D DS GS Fig. 12 Fig. 13 Q total gate charge 20 30 42 nC G(tot) 1 118A Continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature.Nexperia PSMN3R3-40MSH N-channel 40 V, 3.3 m, standard level MOSFET in LFPAK33 using NextPower-S3 technology 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source D 2 S source G 3 S source 4 G gate mbb076 S mb D Mounting base connected to drain 1 2 3 4 LFPAK33 (SOT1210) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN3R3-40MSH LFPAK33 Plastic, single ended surface mounted package (LFPAK33) 8 SOT1210 leads 0.65 mm pitch 7. Marking Table 4. Marking codes Type number Marking code PSMN3R3-40MSH 3H3S40 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 40 V DS j V peak drain-source t 20 ns f 500 kHz E 200 nJ - 45 V DSM p DS(AL) voltage pulsed V drain-gate voltage 25 C T 175 C R = 20 k - 40 V DGR j GS V gate-source voltage -20 20 V GS P total power dissipation T = 25 C Fig. 1 - 101 W tot mb I drain current V = 10 V T = 25 C Fig. 2 1 - 118 A D GS mb V = 10 V T = 100 C - 84 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 3 - 475 A DM p mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering - 260 C sld(M) temperature Source-drain diode I source current T = 25 C - 101 A S mb PSMN3R3-40MSH All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 11 November 2019 2 / 12