PSMN6R0-30YLB,115 Nexperia

PSMN6R0-30YLB,115 electronic component of Nexperia
PSMN6R0-30YLB,115 Nexperia
PSMN6R0-30YLB,115 MOSFETs
PSMN6R0-30YLB,115  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of PSMN6R0-30YLB,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN6R0-30YLB,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. PSMN6R0-30YLB,115
Manufacturer: Nexperia
Category: MOSFETs
Description: NXP Semiconductors MOSFET N-CH 30 V 6.5 MOHMS LOGIC LEVEL MOSFET
Datasheet: PSMN6R0-30YLB,115 Datasheet (PDF)
Price (USD)
1: USD 1.1513 ea
Line Total: USD 1.15 
Availability : 0
  
QtyUnit Price
1$ 1.1513
10$ 0.7125
100$ 0.4125
500$ 0.3234
1000$ 0.319
1500$ 0.2255
3000$ 0.1991

Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 0.4166
3000$ 0.4157
6000$ 0.4147
9000$ 0.4138
12000$ 0.413
15000$ 0.412
24000$ 0.411
30000$ 0.41
75000$ 0.4091


Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.7866
10$ 0.6586
100$ 0.4936
500$ 0.362


Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.8675
10$ 0.7133
100$ 0.4947
500$ 0.4136
1000$ 0.3953


Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 4500
Multiples : 4500
QtyUnit Price
4500$ 0.2134


Availability 0
Ship by Wed. 22 Oct to Fri. 24 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.1513
10$ 0.7125
100$ 0.4125
500$ 0.3234
1000$ 0.319
1500$ 0.2255
3000$ 0.1991


Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 0.3263

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
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We are delighted to provide the PSMN6R0-30YLB,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN6R0-30YLB,115 and other electronic components in the MOSFETs category and beyond.

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PSMN6R0-30YLB N-channel 30 V 6.5 m logic level MOSFET in LFPAK using NextPower technology Rev. 2 24 October 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Power SO8 package, Optimised for 4.5V Gate drive utilising qualified to 175C NextPower Superjunction technology Low parasitic inductance and Ultra low QG, QGD, & QOSS for high resistance system efficiencies at low and high loads 1.3 Applications DC-to-DC converters Synchronous buck regulator Load switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175C --30 V DS j I drain current T =25C V =10V --71 A D mb GS see Figure 1 P total power dissipation T =25C see Figure 2 --58 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state resistance V =4.5 V I =20A T =25C -6.9 8.1 m DSon GS D j see Figure 12 V =10V I =20A T =25C -5.5 6.5 m GS D j see Figure 12 Dynamic characteristics Q gate-drain charge V =4.5 V I =20A V =15V -2.6 -nC GD GS D DS see Figure 14 see Figure 15 Q total gate charge V =4.5 V I =20A V =15V -9 -nC G(tot) GS D DS see Figure 14 see Figure 15PSMN6R0-30YLB Nexperia N-channel 30 V 6.5 m logic level MOSFET in LFPAK using NextPower technology 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to drain 1234 SOT669 (LFPAK Power-SO8) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN6R0-30YLB LFPAK Power-SO8 plastic single-ended surface-mounted package 4 leads SOT669 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 30 V DS j V drain-gate voltage 25 C T 175 C R =20k -30 V DGR j GS V gate-source voltage -20 20 V GS I drain current V =10 V T =25C see Figure 1 -71 A D GS mb V =10 V T = 100 C see Figure 1 -50 A GS mb I peak drain current pulsed t 10 s T =25C see Figure 4 - 283 A DM p mb P total power dissipation T =25C see Figure 2 -58 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering temperature - 260 C sld(M) V electrostatic discharge voltage MM (JEDEC JESD22-A115) 210 - V ESD Source-drain diode I source current T =25C - 53 A S mb I peak source current pulsed t 10 s T = 25 C - 283 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10 V T =25 C I =71A -13 mJ DS(AL)S GS j(init) D avalanche energy V 30 V R =50 unclamped sup GS see Figure 3 PSMN6R0-30YLB All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 24 October 2011 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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