PSMN5R6-100PS,127 Nexperia

PSMN5R6-100PS N-channel 100 V 5.6 m standard level MOSFET in TO220 30 November 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching and conduction losses Improved dynamic avalanche performance Suitable for standard level gate drive sources 1.3 Applications DC-to-DC converters Load switching Motor control Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current T = 25 C V = 10 V Fig. 1 1 - - 100 A D mb GS P total power dissipation T = 25 C Fig. 2 - - 306 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 4.3 5.6 m DSon GS D j resistance Fig. 11 Fig. 12 Dynamic characteristics Q gate-drain charge V = 10 V I = 80 A V = 50 V - 43 - nC GD GS D DS Fig. 13 Fig. 14 Q total gate charge - 141 - nC G(tot) Avalanche Ruggedness E non-repetitive drain- V = 10 V T = 25 C I = 100 A - - 469 mJ DS(AL)S GS j(init) D source avalanche V 100 V R = 50 unclamped sup GS energyNexperia PSMN5R6-100PS N-channel 100 V 5.6 m standard level MOSFET in TO220 1 Continious current limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb D 1 G gate 2 D drain G 3 S source mbb076 S mb D mounting base connected to drain 1 2 3 TO-220AB (SOT78) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN5R6-100PS TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB 4. Marking Table 4. Marking codes Type number Marking code PSMN5R6-100PS PSMN5R6-100PS 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage T 25 C T 175 C R = 20 k - 100 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V = 10 V T = 100 C Fig. 1 - 95 A D GS j V = 10 V T = 25 C Fig. 1 1 - 100 A GS mb PSMN5R6-100PS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 30 November 2012 2 / 13