X-On Electronics has gained recognition as a prominent supplier of PSMN6R0-30YLDX mosfet across the USA, India, Europe, Australia, and various other global locations. PSMN6R0-30YLDX mosfet are a product manufactured by Nexperia. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

PSMN6R0-30YLDX

PSMN6R0-30YLDX electronic component of Nexperia
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Part No.PSMN6R0-30YLDX
Manufacturer: Nexperia
Category:MOSFET
Description: MOSFET N-channel 30 V 6 mo FET
Datasheet: PSMN6R0-30YLDX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6311 ea
Line Total: USD 0.63

Availability - 693
Ships to you between
Thu. 06 Jun to Mon. 10 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1870 - WHS 1


Ships to you between Thu. 06 Jun to Mon. 10 Jun

MOQ : 1
Multiples : 1
1 : USD 0.6705
10 : USD 0.5762
100 : USD 0.3968
500 : USD 0.3312
1000 : USD 0.2956
1500 : USD 0.2553
3000 : USD 0.2047
9000 : USD 0.1955
24000 : USD 0.1921

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We proudly offer the PSMN6R0-30YLDX MOSFET at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the PSMN6R0-30YLDX MOSFET.

PSMN6R0-30YLD N-channel 30 V, 6.0 m logic level MOSFET in LFPAK56 using NextPowerS3 Technology 10 February 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperias unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. 2. Features and benefits Ultra low Q , Q and Q for high system efficiency, especially at higher switching G GD OSS frequencies Superfast switching with soft-recovery s-factor > 1 Low spiking and ringing for low EMI designs Unique SchottkyPlus technology Schottky-like performance with < 1 A leakage at 25 C Optimised for 4.5 V gate drive Low parasitic inductance and resistance High reliability clip bonded and solder die attach Power SO8 package no glue, no wire bonds, qualified to 175 C Wave solderable exposed leads for optimal visual solder inspection 3. Applications On-board DC-to-DC solutions for server and telecommunications Secondary-side synchronous rectification in telecommunication applications Voltage regulator modules (VRM) Point-of-Load (POL) modules Power delivery for V-core, ASIC, DDR, GPU, VGA and system components Brushed and brushless motor control 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 30 V DS j I drain current T = 25 C V = 10 V Fig. 2 - - 66 A D mb GS P total power dissipation T = 25 C Fig. 1 - - 47 W tot mbNexperia PSMN6R0-30YLD N-channel 30 V, 6.0 m logic level MOSFET in LFPAK56 using NextPowerS3 Technology Symbol Parameter Conditions Min Typ Max Unit T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 4.5 V I = 15 A T = 25 C - 6.7 8.35 m DSon GS D j resistance Fig. 10 V = 10 V I = 15 A T = 25 C - 5 6 m GS D j Fig. 10 Dynamic characteristics Q gate-drain charge V = 4.5 V I = 15 A V = 15 V - 1.8 - nC GD GS D DS Fig. 12 Fig. 13 Q total gate charge V = 4.5 V I = 15 A V = 15 V - 6.5 - nC G(tot) GS D DS Fig. 12 Fig. 13 Source-drain diode S softness factor I = 15 A V = 0 V dI /dt = -100 A/s - 1.2 - S GS S V = 15 V Fig. 16 DS 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source mbb076 S 4 G gate 1 2 3 4 mb D mounting base connected to LFPAK56 Power- drain SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN6R0-30YLD LFPAK56 Plastic single-ended surface-mounted package (LFPAK56 SOT669 Power-SO8 Power-SO8) 4 leads 7. Marking Table 4. Marking codes Type number Marking code PSMN6R0-30YLD 6D030L PSMN6R0-30YLD All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 10 February 2014 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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